Infineon Technologies AG N-Channel Power MOSFET BSZ146N10LS5

Description
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Summary of Features Low R DS(on) in small package Low gate charge Lower output charge Logic level compatibility Benefits Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Adapter Telecom Applications Connected and smart lighting for IoT Cordless power tools and outdoor power equipment Industrial robots system solutions for Industry 4.0 Mobile devices and smartphones Uninterruptible power supplies (UPS) Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Summary of Features Low R DS(on) in small package Low gate charge Lower output charge Logic level compatibility Benefits Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Adapter Telecom Applications Connected and smart lighting for IoT Cordless power tools and outdoor power equipment Industrial robots system solutions for Industry 4.0 Mobile devices and smartphones Uninterruptible power supplies (UPS) Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSZ146N10LS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ146N10LS5
N-Channel Power MOSFET BSZ146N10LS5
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. Summary of Features Low R DS(on) in small package Low gate charge Lower output charge Logic level compatibility Benefits Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Adapter Telecom Applications Connected and smart lighting for IoT Cordless power tools and outdoor power equipment Industrial robots system solutions for Industry 4.0 Mobile devices and smartphones Uninterruptible power supplies (UPS) Designers who used this product also designed with XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET XMC1403-Q048X0128 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 BSC037N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.


Summary of Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility

Benefits

  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5V supplies are available
  • Driven directly from microcontrollers (slow switching)
  • System cost reduction

Potential Applications

  • Wireless charging
  • Adapter
  • Telecom

Applications

  • Connected and smart lighting for IoT
  • Cordless power tools and outdoor power equipment
  • Industrial robots system solutions for Industry 4.0
  • Mobile devices and smartphones
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • XMC1403-Q048X0128 AA |
    32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSZ146N10LS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0146 ohms
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