Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS159NL6327 BSS159NL6327

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 979290-BSS159NL6327 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Input Capacitance: 44 pF Power Dissipation: 360 mW Number of Pins: 3 Rise Time: 2.9 ns Fall Time: 2.9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 360 mW Continuous Drain Current (ID): 230 mA Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 9 ns Drain to Source Resistance: 3.5 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.5 Ω
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 979290-BSS159NL6327 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Input Capacitance: 44 pF Power Dissipation: 360 mW Number of Pins: 3 Rise Time: 2.9 ns Fall Time: 2.9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 360 mW Continuous Drain Current (ID): 230 mA Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 9 ns Drain to Source Resistance: 3.5 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.5 Ω
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS159NL6327 - 979290-BSS159NL6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS159NL6327
979290-BSS159NL6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS159NL6327 979290-BSS159NL6327
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 979290-BSS159NL6327 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Input Capacitance: 44 pF Power Dissipation: 360 mW Number of Pins: 3 Rise Time: 2.9 ns Fall Time: 2.9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-23-3 Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 360 mW Continuous Drain Current (ID): 230 mA Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 9 ns Drain to Source Resistance: 3.5 Ω Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.5 Ω

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 979290-BSS159NL6327
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 60 V
Input Capacitance: 44 pF
Power Dissipation: 360 mW
Number of Pins: 3
Rise Time: 2.9 ns
Fall Time: 2.9 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-23-3
Popularity: Low
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 360 mW
Continuous Drain Current (ID): 230 mA
Drain to Source Breakdown Voltage: 60 V
Turn-Off Delay Time: 9 ns
Drain to Source Resistance: 3.5 Ω
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 3.5 Ω

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 979290-BSS159NL6327
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS159NL6327
V(BR)DSS 60 volts
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