Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSR316PL6327HTSA1 BSR316PL6327HTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1024475-BSR316PL6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SC-59
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 360mA (Ta)
Gate-Source Threshold Voltage: 1V @ 170μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 165pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 360mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

P-Channel 100V 360mA (Ta) 500mW (Ta) Surface Mount PG-SC59-3

MOSFET P-CH 100V 360MA SC59 Product overview: BSR316PL6327HTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 360MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 360MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSR316PL6327HTSA1 can be used for catalog matching and distributor lookup.