Win Source Part Number: 1354471-BSS139IXTSA1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT-23-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Power Dissipation (Max): 360mW (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 250V 100MA SOT23-3 Product overview: BSS139IXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 100MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 100MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS139IXTSA1 can be used for catalog matching and distributor lookup.
N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT-23-3
N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT-23-3
N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT-23-3
MOSFET, N-CH, 250V, 0.1A, SOT-23 ROHS COMPLIANT: YES
SMALL SIGNAL MOSFETS PG-SOT23-3
MOSFET N-CH 250V 100MA SOT23-3
| RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2250563 | 1354471-BSS139IXTSA1 | 278-BSS139IXTSA1 | 448-BSS139IXTSA1TR-ND | 40AJ6237 | BSS139IXTSA1 | BSS139IXTSA1 |
| Product Name | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 250V 100MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 250V, 0.1A, Sot-23 Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT-23 | SOT3; SOT23 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Depletion |
