The BSS7728NH6327XTSA2 is an N-channel MOSFET designed for automotive applications, compliant with AEC-Q101 standards. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 200mA at 25¬8C, with a pulsed drain current capability of up to 800mA. The device has a low on-state resistance (RDS(on)) of 5Oc at 500mA and 10V gate voltage, making it suitable for efficient switching applications. The gate threshold voltage (VGS(th)) ranges from 1.3V to 2.3V, allowing for logic-level operation. The power dissipation is rated at 360mW, and the device operates within a temperature range of -55¬8C to +150¬8C. It is packaged in a PG-SOT-23 format, with a tape and reel option for easy handling in automated assembly processes. The BSS7728NH6327XTSA2 is halogen-free and has a low gate charge of 1.5nC at 10V, which contributes to its fast switching capabilities.
Win Source Part Number: 1049742-BSS7728NH632
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, SIPMOS®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Power Dissipation (Max): 360mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSS138NH6327XTSA2; SN7002NH6327XTSA2; BS870-7-F; BSS138; NDS0605; BSS138-7-FBSS7728N; BSS7728N H6327; BSS7728NH6327; BSS7728NH6327XT; BSS7728NH6327XTSA2.;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Infineon Technologies
Other Names: BSS7728NH6327XTSA2TR
Base Product Number: BSS7728
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 200MA SOT23-3 Product overview: BSS7728NH6327XTSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 200MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 200MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS7728NH6327XTS
N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Infineon MOSFET BSS7728NH6327XTSA2
Infineon MOSFET BSS7728NH6327XTSA2
Infineon MOSFET BSS7728NH6327XTSA2
MOSFET, N-CH, 60V, 0.2A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 200MA SOT23-3
MOSFET N-CH 60V 200MA SOT23-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049742-BSS7728NH6327XTSA2 | 278-BSS7728NH6327XTSA2 | BSS7728NH6327XTSA2TR-ND | 2144336 | 2144337P | 68AC4433 | BSS7728NH6327XTSA2 | BSS7728NH6327XTSA2 | BSS7728NH6327XTSA2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 200MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, N-Ch, 60V, 0.2A, Sot-23-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 | SOT23; SOT-23 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| MOSFET Operating Mode | Enhancement |
