Infineon Technologies AG Single FETs, MOSFETs BSP89 E6327

Description
N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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Description
N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Single FETs, MOSFETs - BSP89E6327-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP89E6327-ND
Single FETs, MOSFETs BSP89E6327-ND
N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP89 E6327 - 201419-BSP89 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP89 E6327
201419-BSP89 E6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP89 E6327 201419-BSP89 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201419-BSP89 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 240V Continuous Drain Current at 25°C: 350mA (Ta) Gate-Source Threshold Voltage: 1.8V @ 108μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 350mA, 10V Alternative Parts (Cross-Reference): BSP89; BSP89 L6327; BSP88 E6327; Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 201419-BSP89 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 240V
Continuous Drain Current at 25°C: 350mA (Ta)
Gate-Source Threshold Voltage: 1.8V @ 108μA
Max Gate Charge: 6.4nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 350mA, 10V
Alternative Parts (Cross-Reference): BSP89; BSP89 L6327; BSP88 E6327;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP89E6327-ND 201419-BSP89 E6327
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP89 E6327
Polarity N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4
Transistor Grade / Operating Range Automotive
V(BR)DSS 240 volts
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