Infineon Technologies AG 30V 40A MOSFET Transistor BSZ0902NS

MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS Product overview: BSZ0902NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ0902NS can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1155003-BSZ0902NS
Series: OptiMOS
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Family Name: BSZ0902NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TSDSON-8-FL
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.1W (Ta), 48W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; uPA2822T1L-E2-AT; SiS444DN-T1-GE3;
Introduction Date: March 02, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited