Infineon Technologies AG Single FETs, MOSFETs BSZ042N04NSGATMA1

Description
N-Channel 40V 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
Request a Quote Datasheet
Description
N-Channel 40V 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSZ042N04NSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ042N04NSGATMA1TR-ND
Single FETs, MOSFETs BSZ042N04NSGATMA1TR-ND
N-Channel 40V 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

N-Channel 40V 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Singapore, Singapore
40V 40A MOSFET Transistor
278-BSZ042N04NSGATMA1
40V 40A MOSFET Transistor 278-BSZ042N04NSGATMA1
MOSFET N-CH 40V 40A TSDSON-8 Product overview: BSZ042N04NSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ042N04NSGATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 40A TSDSON-8 Product overview: BSZ042N04NSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ042N04NSGATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ042N04NSGATMA1 - 1024554-BSZ042N04NSGATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ042N04NSGATMA1
1024554-BSZ042N04NSGATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ042N04NSGATMA1 1024554-BSZ042N04NSGATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1024554-BSZ042N04NSG ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TSDSON-8 Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 36μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 3700pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1024554-BSZ042N04NSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 36μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 3700pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSZ042N04NSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSZ042N04NSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSZ042N04NSGATMA1
MOSFET N-CH 40V 40A TSDSON-8

MOSFET N-CH 40V 40A TSDSON-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSZ042N04NSGATMA1TR-ND 278-BSZ042N04NSGATMA1 1024554-BSZ042N04NSGATMA1 BSZ042N04NSGATMA1
Product Name Single FETs, MOSFETs 40V 40A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ042N04NSGATMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN Tape & Reel (TR) SOT3; PG-TSDSON-8 8-PowerVDFN
PD 2100 milliwatts 2100 to 69000 milliwatts
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