ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased EMB4T2R

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Win Source Part Number: 1123546-EMB4T2R
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR)
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Alternative Parts (Cross-Reference): EMB4 T2R;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Rohm Semiconductor
Other Names: EMB4T2RCT,EMB4T2RDKR,EMB4T2RTR,EMB4T2R-ND
Base Product Number: EMB4T2

TRANS 2PNP PREBIAS 0.15W EMT6 Product overview: EMB4T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMB4T2R can be used for catalog matching and distributor lookup.