ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased EMB4T2R

Description
Win Source Part Number: 1123546-EMB4T2R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel (TR) Standard Package: 8,000 Mounting: SMD (SMT) Power - Max: 150mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 Alternative Parts (Cross-Reference): EMB4 T2R; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Rohm Semiconductor Other Names: EMB4T2RCT,EMB4T2RDKR ,EMB4T2RTR,EMB4T2R-N D Base Product Number: EMB4T2
Request a Quote Datasheet
Description
Win Source Part Number: 1123546-EMB4T2R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel (TR) Standard Package: 8,000 Mounting: SMD (SMT) Power - Max: 150mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 Alternative Parts (Cross-Reference): EMB4 T2R; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Rohm Semiconductor Other Names: EMB4T2RCT,EMB4T2RDKR ,EMB4T2RTR,EMB4T2R-N D Base Product Number: EMB4T2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1123546-EMB4T2R - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1123546-EMB4T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1123546-EMB4T2R
Win Source Part Number: 1123546-EMB4T2R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel (TR) Standard Package: 8,000 Mounting: SMD (SMT) Power - Max: 150mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 Alternative Parts (Cross-Reference): EMB4 T2R; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Rohm Semiconductor Other Names: EMB4T2RCT,EMB4T2RDKR ,EMB4T2RTR,EMB4T2R-N D Base Product Number: EMB4T2

Win Source Part Number: 1123546-EMB4T2R
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR)
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Alternative Parts (Cross-Reference): EMB4 T2R;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Rohm Semiconductor
Other Names: EMB4T2RCT,EMB4T2RDKR,EMB4T2RTR,EMB4T2R-ND
Base Product Number: EMB4T2

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMB4T2RTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMB4T2RTR-ND
Bipolar Transistor Arrays, Pre-Biased EMB4T2RTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMB4T2R
Bipolar Transistors - Pre-Biased EMB4T2R
Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA

Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA

Buy Now Datasheet
TRANS 2PNP PREBIAS 0.15W EMT6 - 687-EMB4T2R - Utmel Electronic Limited
Hong Kong, China
TRANS 2PNP PREBIAS 0.15W EMT6
687-EMB4T2R
TRANS 2PNP PREBIAS 0.15W EMT6 687-EMB4T2R
TRANS 2PNP PREBIAS 0.15W EMT6

TRANS 2PNP PREBIAS 0.15W EMT6

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMB4T2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMB4T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMB4T2R
TRANS 2PNP PREBIAS 0.15W EMT6

TRANS 2PNP PREBIAS 0.15W EMT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1123546-EMB4T2R EMB4T2RTR-ND EMB4T2R 687-EMB4T2R EMB4T2R
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
Package Type SOT3 SOT-563, SOT-666
IC(max) 100 milliamps 100 milliamps
Power Gain 100 dB
Unlock Full Specs
to access all available technical data