ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased EMH60T2R

Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
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Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Request a Quote
Datasheet
Datasheet Summary
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The RF Transistor, part number 68AH9847, is designed for applications requiring a maximum supply voltage of 50V and a collector current of up to 100mA. It is housed in a compact SOT-563 package, making it suitable for space-constrained designs. The device features built-in bias resistors, which simplify circuit design and reduce the need for external components. It operates effectively in various applications, including switching circuits, inverter circuits, interface circuits, and driver circuits. The transistor is RoHS compliant, ensuring it meets environmental standards. With a power dissipation rating of 150mW and a junction temperature range of -55°C to +150°C, it is suitable for a wide range of operating conditions. The device also exhibits a DC current gain of 80 and a transition frequency of 250MHz, making it a versatile choice for RF applications.

Datasheet Summary
Powered by GS/AI

The RF Transistor, part number 68AH9847, is designed for applications requiring a maximum supply voltage of 50V and a collector current of up to 100mA. It is housed in a compact SOT-563 package, making it suitable for space-constrained designs. The device features built-in bias resistors, which simplify circuit design and reduce the need for external components. It operates effectively in various applications, including switching circuits, inverter circuits, interface circuits, and driver circuits. The transistor is RoHS compliant, ensuring it meets environmental standards. With a power dissipation rating of 150mW and a junction temperature range of -55°C to +150°C, it is suitable for a wide range of operating conditions. The device also exhibits a DC current gain of 80 and a transition frequency of 250MHz, making it a versatile choice for RF applications.

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - EMH60T2RDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH60T2RDKR-ND
Bipolar Transistor Arrays, Pre-Biased EMH60T2RDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH60T2RCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH60T2RCT-ND
Bipolar Transistor Arrays, Pre-Biased EMH60T2RCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH60T2RTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH60T2RTR-ND
Bipolar Transistor Arrays, Pre-Biased EMH60T2RTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Singapore, Singapore
0.15W Bipolar Transistor
293-EMH60T2R
0.15W Bipolar Transistor 293-EMH60T2R
TRANS 2NPN PREBIAS 0.15W EMT6 Product overview: EMH60T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMH60T2R can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.15W EMT6 Product overview: EMH60T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMH60T2R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1123639-EMH60T2R - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1123639-EMH60T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1123639-EMH60T2R
Win Source Part Number: 1123639-EMH60T2R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 8,000 Mounting: SMD (SMT) Power - Max: 150mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 NPN - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Frequency - Transition: 250MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Rohm Semiconductor Other Names: EMH60T2RDKR,EMH60T2R CT,EMH60T2RTR Base Product Number: EMH60

Win Source Part Number: 1123639-EMH60T2R
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Rohm Semiconductor
Other Names: EMH60T2RDKR,EMH60T2RCT,EMH60T2RTR
Base Product Number: EMH60

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMH60T2R
Bipolar Transistors - Pre-Biased EMH60T2R
Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor(with built-in resistors)

Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor(with built-in resistors)

Buy Now Datasheet
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm - 68AH9847 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm
68AH9847
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm 68AH9847
RF TRANSISTOR, 50V, 0.1A, SOT-563 ROHS COMPLIANT: YES

RF TRANSISTOR, 50V, 0.1A, SOT-563 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMH60T2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMH60T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMH60T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site
Bipolar Transistor Arrays, Pre-Biased - EMH60T2R - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
EMH60T2R
Bipolar Transistor Arrays, Pre-Biased EMH60T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Digital Transistors
EMH60T2R
Triode/MOS Tube/Transistor >> Digital Transistors EMH60T2R
80@5mA,10V 2 NPN - Pre-Biased 150mW 100mA 50V 500nA SOT-563 Digital Transistors ROHS

80@5mA,10V 2 NPN - Pre-Biased 150mW 100mA 50V 500nA SOT-563 Digital Transistors ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number EMH60T2RDKR-ND 293-EMH60T2R 1123639-EMH60T2R EMH60T2R 68AH9847 EMH60T2R EMH60T2R EMH60T2R
Product Name Bipolar Transistor Arrays, Pre-Biased 0.15W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased Triode/MOS Tube/Transistor >> Digital Transistors
Polarity NPN NPN NPN 2 NPN - Pre-Biased (Dual); NPN NPN
Package Type SOT-563, SOT-666 Tape & Reel (TR) SOT3 TO-3 SOT-563, SOT-666
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
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