Win Source Part Number: 1115115-EMX1FHAT2R
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Rohm Semiconductor
Other Names: EMX1FHAT2RDKR,EMX1FH
Base Product Number: EMX1FHAT2
NPN+NPN GENERAL PURPOSE AMPLIFIC Product overview: EMX1FHAT2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-EMX1FHAT2R can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 180MHz 150mW Surface Mount EMT6
TRANS, DUAL NPN, 50V, SOT-563; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-563; No. of RoHS Compliant: Yes
NPN+NPN GENERAL PURPOSE AMPLIFIC
Bipolar Transistors - BJT NPN+NPN SOT-563 .15A 120 tohFE 50V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1115115-EMX1FHAT2R | 277-EMX1FHAT2R | EMX1FHAT2RTR-ND | 78Y8310 | EMX1FHAT2R | EMX1FHAT2R |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays | Bipolar Transistor | Bipolar Transistor Arrays | Trans, Dual Npn, 50V, Sot-563; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | NPN | NPN | ||
| Package Type | SOT3 | Tape & Reel (TR) | SOT-563, SOT-666 | TO-3 | EMT6 | |
| IC(max) | 150 milliamps | 150 milliamps | 150 milliamps | |||
| Power Gain | 120 dB | |||||
| Operating Frequency | 180 MHz |
