Manufacturer: Rohm Semiconductor
Win Source Part Number: 1325651-UMH3NFHATN
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: UMT6
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: UMH3NFHATNDKR,UMH3NF
Base Product Number: UMH3
RoHS Status: ROHS3 Compliant
NPN+NPN DIGITAL TRANSISTOR(WITH Product overview: UMH3NFHATN from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMH3NFHATN can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Bipolar (BJT) Transistor Array 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
Bipolar (BJT) Transistor Array 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
NPN+NPN DIGITAL TRANSISTOR(WITH
TRANS, NPN, AEC-Q101, 4.7K/4.7K, SOT-353; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 1325651-UMH3NFHATN | 293-UMH3NFHATN | UMH3NFHATNDKR-ND | UMH3NFHATN | 89Y7408 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays | Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Npn, Aec-Q101, 4.7K/4.7K, Sot-353; Collector Emitter Voltage V(Br)Ceo Rohm |
| Polarity | NPN | NPN | NPN | NPN | |
| Package Type | SOT3; 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | 6-TSSOP, SC-88, SOT-363 | AEC-Q101 | TO-3; SOT3 |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||
| Power Gain | 100 dB |
