ROHM Semiconductor USA, LLC Dual Bipolar Transistor IMB3AT110

TRANS PREBIAS DUAL PNP SMT6 Product overview: IMB3AT110 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMB3AT110 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

TRANS PREBIAS DUAL PNP SMT6

Win Source Part Number: 988532-IMB3AT110
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 300mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Rohm Semiconductor
Other Names: IMB3AT110-ND,846-IMB3AT110DKR,846-IMB3AT110CT,846-IMB3AT110TR
Base Product Number: IMB3AT110