UMF28N is a dual transistor device integrating a PNP general-purpose transistor and an NPN digital transistor in a single SOT-363 (UMT6) package for power management applications. The PNP transistor has a collector-emitter voltage rating of -50 V and a collector current of -150 mA, while the NPN digital transistor has a supply voltage of 50 V and a maximum output current of 50 mA. Both transistors share a maximum power dissipation of 150 mW and operate within a junction temperature range of -55°C to 150°C. The device is designed to reduce mounting cost and area by combining two functions in one package. It meets RoHS compliance and is supplied in a 3000-piece tape and reel format.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
TRANS NPN PREBIAS/PNP 0.15W UMT6 Product overview: UMF28N from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UMF28N can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 048509-UMF28N
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 140MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT6
Maximum Current Collector: 100mA, 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 68 @ 5mA, 5V / 180 @ 1mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | UMF28N | UMF28N | 293-UMF28N | 048509-UMF28N |
| Product Name | PNP General Purpose Amplification Transistor + NPN Digital transistor | PNP General Purpose Amplification Transistor + NPN Digital transistor | 0.15W Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMF28N |
| Polarity | NPN; PNP | NPN; PNP | NPN; PNP | NPN; PNP; 1 NPN Pre-Biased, 1 PNP |
| Transistor Grade / Operating Range | Commercial | Commercial | ||
| Package Type | UMT6 | SOT-363 | Reel - TR | SOT3; UMT6 |
| Packing Method | Tape Reel | Tape Reel | Reel - TR |
