ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased UMD22NFHATR

Description
PNP+NPN DIGITAL TRANSISTOR (WITH
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Description
PNP+NPN DIGITAL TRANSISTOR (WITH
Request a Quote Datasheet

Suppliers

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Product
Description
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Bipolar Transistor Arrays, Pre-Biased - UMD22NFHATR - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
UMD22NFHATR
Bipolar Transistor Arrays, Pre-Biased UMD22NFHATR
PNP+NPN DIGITAL TRANSISTOR (WITH

PNP+NPN DIGITAL TRANSISTOR (WITH

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 958398-UMD22NFHATR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
958398-UMD22NFHATR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 958398-UMD22NFHATR
Win Source Part Number: 958398-UMD22NFHATR Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Series: Automotive, AEC-Q101 Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6 ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Rohm Semiconductor Other Names: 846-UMD22NFHADKR,846 -UMD22NFHATR,846-UMD 22NFHACT Base Product Number: UMD22

Win Source Part Number: 958398-UMD22NFHATR
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 150mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Rohm Semiconductor
Other Names: 846-UMD22NFHADKR,846-UMD22NFHATR,846-UMD22NFHACT
Base Product Number: UMD22

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 846-UMD22NFHACT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
846-UMD22NFHACT-ND
Bipolar Transistor Arrays, Pre-Biased 846-UMD22NFHACT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 846-UMD22NFHATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
846-UMD22NFHATR-ND
Bipolar Transistor Arrays, Pre-Biased 846-UMD22NFHATR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 846-UMD22NFHADKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
846-UMD22NFHADKR-ND
Bipolar Transistor Arrays, Pre-Biased 846-UMD22NFHADKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UMD22NFHATR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UMD22NFHATR
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UMD22NFHATR
PNP+NPN DIGITAL TRANSISTOR (WITH

PNP+NPN DIGITAL TRANSISTOR (WITH

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number UMD22NFHATR 958398-UMD22NFHATR 846-UMD22NFHACT-ND UMD22NFHATR
Product Name Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP NPN; PNP NPN; PNP
Package Type 6-TSSOP, SC-88, SOT-363 SOT3 6-TSSOP, SC-88, SOT-363 AEC-Q101
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
Operating Frequency 250 MHz 250 MHz
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