NPN low VCEsat transistor in a SOT89 surface-mounted plastic package measuring 4.5 mm x 2.5 mm x 1.5 mm, with a 1.5 mm lead pitch. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 6.2 A, and a peak collector current of 15 A. The device exhibits a collector-emitter saturation voltage as low as 50 mV at 1 A collector current and 10 mA base current, and a saturation resistance of 18 to 35 mΩ at 4 A collector current and 400 mA base current. It is AEC-Q101 qualified for automotive applications.
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PX
Features and benefits
Applications
PBSS4041NX - 60 V, 6.2 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS4041NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6.2 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6.2 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4041NX,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086455-PBSS4041NX,1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 6.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 210mV @ 300mA, 6A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 4A, 2V
Maximum Power Dissipation: 2.5W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89
TRANS NPN 60V 6.2A SOT89
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PBSS4041NX,115 | 276-PBSS4041NX,115 | 1086455-PBSS4041NX,115 | 1727-PBSS4041NX,115CT-ND | PBSS4041NX,115 |
| Product Name | 60 V, 6.2 A NPN low VCEsat transistor | 60 V 6.2 A SOT-89 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - PBSS4041NX,115 | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT89; SOT89 SOT89 | SOT3; SOT89; SOT-89-3 | SOT89; TO-243AA |
