Nexperia B.V. 60 V, 6.2 A NPN low VCEsat transistor PBSS4041NX,115

Description
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Description
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 6.2 A NPN low VCEsat transistor - PBSS4041NX,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 6.2 A NPN low VCEsat transistor
PBSS4041NX,115
60 V, 6.2 A NPN low VCEsat transistor PBSS4041NX,115
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PX Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4041PX

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-5105-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5105-2-ND
Single Bipolar Transistors 1727-5105-2-ND
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-5105-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5105-6-ND
Single Bipolar Transistors 1727-5105-6-ND
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-5105-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5105-1-ND
Single Bipolar Transistors 1727-5105-1-ND
Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 6.2A 130MHz 2.5W Surface Mount SOT-89

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4041NX,115 - 1086455-PBSS4041NX,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4041NX,115
1086455-PBSS4041NX,115
TRANSISTORS - Transistors (BJT) - Single - PBSS4041NX,115 1086455-PBSS4041NX,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086455-PBSS4041NX,1 15 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 6.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 210mV @ 300mA, 6A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 150 @ 4A, 2V Maximum Power Dissipation: 2.5W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086455-PBSS4041NX,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 6.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 210mV @ 300mA, 6A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 4A, 2V
Maximum Power Dissipation: 2.5W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
60 V 6.2 A SOT-89 Bipolar Transistor
276-PBSS4041NX,115
60 V 6.2 A SOT-89 Bipolar Transistor 276-PBSS4041NX,115
PBSS4041NX - 60 V, 6.2 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS4041NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6.2 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6.2 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4041NX,115 can be used for catalog matching and distributor lookup.

PBSS4041NX - 60 V, 6.2 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS4041NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6.2 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6.2 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4041NX,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4041NX,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4041NX,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4041NX,115
TRANS NPN 60V 6.2A SOT89

TRANS NPN 60V 6.2A SOT89

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4041NX,115 1727-5105-2-ND 1086455-PBSS4041NX,115 276-PBSS4041NX,115 PBSS4041NX,115
Product Name 60 V, 6.2 A NPN low VCEsat transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PBSS4041NX,115 60 V 6.2 A SOT-89 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type SOT89; SOT89 SOT89; TO-243AA SOT3; SOT89; SOT-89-3
Transistor Grade / Operating Range Automotive
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