N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
MOSFET, N-CH, 60V, 0.35A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 350MA DFN0606-3
MOSFET 60 V, N-channel Trench MOSFET
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX7002BKHH | 1727-NX7002BKHHDKR-ND | 99AC9427 | NX7002BKHH | NX7002BKHH |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 0.35A, Dfn0606; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | ||||
| IDSS | 350000 milliamps | 350 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 380 milliwatts |
