Nexperia B.V. 60 V, N-channel Trench MOSFET NX7002BKHH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, N-channel Trench MOSFET - NX7002BKHH - Nexperia B.V.
Nijmegen, Netherlands
60 V, N-channel Trench MOSFET
NX7002BKHH
60 V, N-channel Trench MOSFET NX7002BKHH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-NX7002BKHHDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NX7002BKHHDKR-ND
Single FETs, MOSFETs 1727-NX7002BKHHDKR-ND
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-NX7002BKHHCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NX7002BKHHCT-ND
Single FETs, MOSFETs 1727-NX7002BKHHCT-ND
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-NX7002BKHHTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NX7002BKHHTR-ND
Single FETs, MOSFETs 1727-NX7002BKHHTR-ND
N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

N-Channel 60V 350mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NX7002BKHH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NX7002BKHH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3

MOSFET N-CH 60V 350MA DFN0606-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60 V, N-channel Trench MOSFET

MOSFET 60 V, N-channel Trench MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.35A, Dfn0606; Transistor Polarity Nexperia - 99AC9427 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.35A, Dfn0606; Transistor Polarity Nexperia
99AC9427
Mosfet, N-Ch, 60V, 0.35A, Dfn0606; Transistor Polarity Nexperia 99AC9427
MOSFET, N-CH, 60V, 0.35A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.35A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NX7002BKHH 1727-NX7002BKHHDKR-ND NX7002BKHH NX7002BKHH 99AC9427
Product Name 60 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.35A, Dfn0606; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 350000 milliamps 350 milliamps
VGS(off) 20 volts
PD 380 milliwatts
Unlock Full Specs
to access all available technical data