N-channel 60 V logic level MOSFET in an LFPAK56 (SOT669) package designed for automotive applications, conforming to AEC-Q101 with a 175 °C junction temperature rating. It has a maximum drain-source on-state resistance of 7.2 mΩ at 25 °C and 16.3 mΩ at 175 °C, supports continuous drain current up to 100 A at 25 °C, and is rated for repetitive avalanche energy up to 88.2 mJ. The gate-source threshold voltage is specified to exceed 0.5 V at 175 °C. Thermal resistance from junction to mounting base is 0.9 K/W.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 865041-BUK9Y7R2-60E,
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: BUK9Y7
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-11428-2-ND, 568-11428-1-ND, 1727-1814-6, 568-11428-6, BUK9Y7R2-60E,115-ND,
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8
BUK9Y7R2-60E - N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y7R2-60E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y7R2-60E,115
MOSFET N-CH 60V 100A LFPAK56
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9Y7R2-60E,115 | 865041-BUK9Y7R2-60E,115 | 1727-1814-2-ND | 278-BUK9Y7R2-60E,115 | BUK9Y7R2-60E,115 |
| Product Name | N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y7R2-60E,115 | Single FETs, MOSFETs | N-Channel 60 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | ||||
| IDSS | 100000 milliamps | ||||
| VGS(off) | 10 volts | ||||
| PD | 167 milliwatts |
