Nexperia B.V. 60 V, 7 A NPN low VCEsat transistor PBSS4041NZ-QX

Description
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Description
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

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Product
Description
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60 V, 7 A NPN low VCEsat transistor - PBSS4041NZ-QX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 7 A NPN low VCEsat transistor
PBSS4041NZ-QX
60 V, 7 A NPN low VCEsat transistor PBSS4041NZ-QX
NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4041PZ-Q

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS4041NZ-QXTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4041NZ-QXTR-ND
Single Bipolar Transistors 1727-PBSS4041NZ-QXTR-ND
TRANS NPN 60V 7A SOT-223

TRANS NPN 60V 7A SOT-223

Buy Now Datasheet
 - PBSS4041NZ-QX - Rochester Electronics
Newburyport, MA, United States
60 V, 7 A NPN low VCEsat transistor

60 V, 7 A NPN low VCEsat transistor

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics
Product Category Transistors Transistors RF Transistors
Product Number PBSS4041NZ-QX 1727-PBSS4041NZ-QXTR-ND PBSS4041NZ-QX
Product Name 60 V, 7 A NPN low VCEsat transistor Single Bipolar Transistors
Package Type SOT223; SOT223 SOT223; TO-261-4, TO-261AA SOT223
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