PBSS304NX is a 60 V, 4.7 A NPN low VCEsat transistor in a SOT89 package measuring 4.5 mm × 2.5 mm × 1.5 mm. It features a collector-emitter saturation voltage as low as 210 mV at 4 A and 200 mA base current, and a saturation resistance of 37 to 53 mΩ under the same conditions. The device has a peak collector current capability of 9.4 A, a DC current gain (hFE) of 250 to 470 at 2 A collector current, and is qualified to AEC-Q101 for automotive use. It is rated for a maximum junction temperature of 150 °C and total power dissipation up to 2.1 W on a ceramic PCB. The PNP complement is PBSS304PX.
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX
Features and benefits
Applications
PBSS304NX - 60 V, 4.7 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS304NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 4.7 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 4.7 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS304NX,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086420-PBSS304NX,11
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 4.7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 245mV @ 235mA, 4.7A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 250 @ 2A, 2V
Maximum Power Dissipation: 2.1W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89
TRANS NPN 60V 4.7A SOT89
Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS304NX,115 | 276-PBSS304NX,115 | 1086420-PBSS304NX,115 | 1727-PBSS304NX,115CT-ND | PBSS304NX,115 | 34R4410 |
| Product Name | 60 V, 4.7 A NPN low VCEsat transistor | 60 V 4.7 A SOT-89 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - PBSS304NX,115 | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia |
| Package Type | SOT89; SOT89 SOT89 | SOT3; SOT89; SOT-89-3 | SOT89; TO-243AA | SOT89; SOT-89 | TO-3 | |
| Transistor Grade / Operating Range | Automotive | Automotive | ||||
| Polarity | NPN; NPN | NPN | NPN |
