Nexperia B.V. 60 V, 4.7 A NPN low VCEsat transistor PBSS304NX,115

Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
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Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
Request a Quote
Datasheet
Datasheet Summary
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PBSS304NX is a 60 V, 4.7 A NPN low VCEsat transistor in a SOT89 package measuring 4.5 mm × 2.5 mm × 1.5 mm. It features a collector-emitter saturation voltage as low as 210 mV at 4 A and 200 mA base current, and a saturation resistance of 37 to 53 mΩ under the same conditions. The device has a peak collector current capability of 9.4 A, a DC current gain (hFE) of 250 to 470 at 2 A collector current, and is qualified to AEC-Q101 for automotive use. It is rated for a maximum junction temperature of 150 °C and total power dissipation up to 2.1 W on a ceramic PCB. The PNP complement is PBSS304PX.

Datasheet Summary
Powered by GS/AI

PBSS304NX is a 60 V, 4.7 A NPN low VCEsat transistor in a SOT89 package measuring 4.5 mm × 2.5 mm × 1.5 mm. It features a collector-emitter saturation voltage as low as 210 mV at 4 A and 200 mA base current, and a saturation resistance of 37 to 53 mΩ under the same conditions. The device has a peak collector current capability of 9.4 A, a DC current gain (hFE) of 250 to 470 at 2 A collector current, and is qualified to AEC-Q101 for automotive use. It is rated for a maximum junction temperature of 150 °C and total power dissipation up to 2.1 W on a ceramic PCB. The PNP complement is PBSS304PX.

Suppliers

Company
Product
Description
Supplier Links
60 V, 4.7 A NPN low VCEsat transistor - PBSS304NX,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 4.7 A NPN low VCEsat transistor
PBSS304NX,115
60 V, 4.7 A NPN low VCEsat transistor PBSS304NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS304PX

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • High-voltage DC-to-DC conversion
  • High-voltage MOSFET gate driving
  • High-voltage motor control
  • High-voltage power switches (e.g. motors, fans)
  • Automotive applications
Supplier's Site Datasheet
Singapore, Singapore
60 V 4.7 A SOT-89 Bipolar Transistor
276-PBSS304NX,115
60 V 4.7 A SOT-89 Bipolar Transistor 276-PBSS304NX,115
PBSS304NX - 60 V, 4.7 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS304NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 4.7 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 4.7 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS304NX,115 can be used for catalog matching and distributor lookup.

PBSS304NX - 60 V, 4.7 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS304NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 4.7 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 4.7 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS304NX,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS304NX,115CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS304NX,115CT-ND
Single Bipolar Transistors 1727-PBSS304NX,115CT-ND
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS304NX,115TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS304NX,115TR-ND
Single Bipolar Transistors 1727-PBSS304NX,115TR-ND
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS304NX,115DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS304NX,115DKR-ND
Single Bipolar Transistors 1727-PBSS304NX,115DKR-ND
Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 60V 4.7A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS304NX,115 - 1086420-PBSS304NX,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS304NX,115
1086420-PBSS304NX,115
TRANSISTORS - Transistors (BJT) - Single - PBSS304NX,115 1086420-PBSS304NX,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086420-PBSS304NX,11 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 4.7A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 245mV @ 235mA, 4.7A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 250 @ 2A, 2V Maximum Power Dissipation: 2.1W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086420-PBSS304NX,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 4.7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 245mV @ 235mA, 4.7A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 250 @ 2A, 2V
Maximum Power Dissipation: 2.1W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia - 34R4410 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia
34R4410
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia 34R4410
Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia - 93X4514 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia
93X4514
Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia 93X4514
Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS304NX,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS304NX,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS304NX,115
TRANS NPN 60V 4.7A SOT89

TRANS NPN 60V 4.7A SOT89

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS304NX,115 276-PBSS304NX,115 1727-PBSS304NX,115CT-ND 1086420-PBSS304NX,115 34R4410 PBSS304NX,115
Product Name 60 V, 4.7 A NPN low VCEsat transistor 60 V 4.7 A SOT-89 Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PBSS304NX,115 Bipolar (Bjt) Single Transistor, Npn, 60 V, 130 Mhz, 600 Mw, 4.7 A, 75 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT89; SOT89 SOT89 SOT89; TO-243AA SOT3; SOT89; SOT-89-3 TO-3 SOT89; SOT-89
Transistor Grade / Operating Range Automotive Automotive
Polarity NPN NPN; NPN NPN
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