Nexperia B.V. 30 V, 350 mA dual N-channel Trench MOSFET NX3008NBKSH

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, 350 mA dual N-channel Trench MOSFET - NX3008NBKSH - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-2726-2-ND - DigiKey
    DigiKey
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    DigiKey
  • FET, MOSFET Arrays - 1727-2726-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NX3008NBKSH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 350 mA dual N-channel Trench MOSFET - NX3008NBKSH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 350 mA dual N-channel Trench MOSFET
NX3008NBKSH
30 V, 350 mA dual N-channel Trench MOSFET NX3008NBKSH
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Low threshold voltage
  • Trench MOSFET technology
  • ESD protection up to 2 kV
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-2726-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2726-2-ND
FET, MOSFET Arrays 1727-2726-2-ND
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Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445mW Surface Mount 6-TSSOP

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FET, MOSFET Arrays - 1727-2726-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2726-6-ND
FET, MOSFET Arrays 1727-2726-6-ND
Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445mW Surface Mount 6-TSSOP

Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445mW Surface Mount 6-TSSOP

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FET, MOSFET Arrays - 1727-2726-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-2726-1-ND
FET, MOSFET Arrays 1727-2726-1-ND
Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445mW Surface Mount 6-TSSOP

Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445mW Surface Mount 6-TSSOP

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NX3008NBKSH
MOSFET NX3008NBKSH
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NX3008NBKSH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NX3008NBKSH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NX3008NBKSH
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Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NX3008NBKSH 1727-2726-2-ND NX3008NBKSH NX3008NBKSH
Product Name 30 V, 350 mA dual N-channel Trench MOSFET FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 350 milliamps
VGS(off) 0.9000 volts
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