NPN transistor in a SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, rated for 30 V collector-emitter voltage and 1 A continuous collector current, with a peak collector current of 3 A. Features a collector-emitter saturation voltage as low as 270 mV at 1 A and 50 mA base current, and saturation resistance of 220 mΩ. AEC-Q101 qualified for automotive use. PNP complement is PBSS5130T.
NPN transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5130T
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086464-PBSS4130T,21
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 270mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 500mA, 2V
Maximum Power Dissipation: 480mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
PBSS4130T - 30 V; 1 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4130T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4130T,215 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 480mW Surface Mount TO-236AB
TRANS, BIPOLAR, NPN, 30V, 1A, SOT-23 ROHS COMPLIANT: YES
TRANS NPN 30V 1A TO236AB
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4130T,215 | 1086464-PBSS4130T,215 | 276-PBSS4130T,215 | 1727-3557-2-ND | 74AH1018 | PBSS4130T,215 |
| Product Name | 30 V; 1 A NPN low VCEsat transistor | TRANSISTORS - Transistors (BJT) - Single - PBSS4130T,215 | 30 V 1 A Bipolar Transistor | Single Bipolar Transistors | Trans, Bipolar, Npn, 30V, 1A, Sot-23 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT23; SOT23 SOT23 | SOT3; TO-236AB (SOT23) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | AEC-Q100 | |
| Polarity | NPN; NPN | NPN | NPN | |||
| Transistor Grade / Operating Range | Automotive |
