Nexperia B.V. 60 V, 2 A NPN/PNP low VCEsat double transistor PBSS4260PANPSX

NPN/PNP low V_CEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/NPN complement: PBSS4260PANS

PNP/PNP complement: PBSS5260PAPS

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• Reduced Printed-Circuit Board (PCB) requirements
• Exposed heat sink for excellent thermal and electrical conductivity
• High efficiency due to less heat generation
• Suitable for Automatic Optical Inspection (AOI) of solder joints

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• LED lighting
• Power switches (e.g. motors, fans)

Bipolar (BJT) Transistor Array NPN, PNP 60V 2A 140MHz 370mW Surface Mount DFN2020D-6

PBSS4260PANPS - 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Product overview: PBSS4260PANPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4260PANPSX can be used for catalog matching and distributor lookup.