Nexperia B.V. 60 V, 2 A NPN/PNP low VCEsat double transistor PBSS4260PANPSX

Description
NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 2 A NPN/PNP low VCEsat double transistor - PBSS4260PANPSX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 2 A NPN/PNP low VCEsat double transistor
PBSS4260PANPSX
60 V, 2 A NPN/PNP low VCEsat double transistor PBSS4260PANPSX
NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)

NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/NPN complement: PBSS4260PANS

PNP/PNP complement: PBSS5260PAPS

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Singapore, Singapore
60 V 2 A Bipolar Transistor
277-PBSS4260PANPSX
60 V 2 A Bipolar Transistor 277-PBSS4260PANPSX
PBSS4260PANPS - 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Product overview: PBSS4260PANPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4260PANPSX can be used for catalog matching and distributor lookup.

PBSS4260PANPS - 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Product overview: PBSS4260PANPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4260PANPSX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PBSS4260PANPSXTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4260PANPSXTR-ND
Bipolar Transistor Arrays 1727-PBSS4260PANPSXTR-ND
Bipolar (BJT) Transistor Array NPN, PNP 60V 2A 140MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array NPN, PNP 60V 2A 140MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Trans, Npn/pnp, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia - 99Y2060 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn/pnp, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia
99Y2060
Trans, Npn/pnp, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia 99Y2060
TRANS, NPN/PNP, AEC-Q101, 60V, SOT1118D; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. of RoHS Compliant: Yes

TRANS, NPN/PNP, AEC-Q101, 60V, SOT1118D; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. of RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4260PANPSX
Bipolar Transistors - BJT PBSS4260PANPSX
Bipolar Transistors - BJT PBSS4260PANPS/HUSON6 /REEL 7" Q

Bipolar Transistors - BJT PBSS4260PANPS/HUSON6/REEL 7" Q

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4260PANPSX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4260PANPSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4260PANPSX
TRANS NPN/PNP 60V 2A DFN2020D-6

TRANS NPN/PNP 60V 2A DFN2020D-6

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4260PANPSX 277-PBSS4260PANPSX 1727-PBSS4260PANPSXTR-ND 99Y2060 PBSS4260PANPSX PBSS4260PANPSX
Product Name 60 V, 2 A NPN/PNP low VCEsat double transistor 60 V 2 A Bipolar Transistor Bipolar Transistor Arrays Trans, Npn/pnp, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT1118D SOT1118D 6-UDFN Exposed Pad TO-3 AEC-Q101
Polarity NPN; PNP NPN; PNP
Transistor Grade / Operating Range Automotive
Transistor Type Trans, Npn/pnp, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia
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