Nexperia B.V. 30 V, 3 A NPN low VCEsat transistor PBSS4330PASX

Description
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 30 V, 3 A NPN low VCEsat transistor - PBSS4330PASX - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - PBSS4330PASX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single Bipolar Transistors - 1727-2382-2-ND - DigiKey
    DigiKey
  • IC TRANS NPN 30V 3A SOT1061 - 554-PBSS4330PASX - Utmel Electronic Limited
    Utmel Electronic Limited
  • Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia - 98Y2301 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4330PASX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 3 A NPN low VCEsat transistor - PBSS4330PASX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 3 A NPN low VCEsat transistor
PBSS4330PASX
30 V, 3 A NPN low VCEsat transistor PBSS4330PASX
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with soldarable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - PBSS4330PASX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS4330PASX
Single Bipolar Transistors PBSS4330PASX
TRANS NPN 30V 3A DFN2020D-3

TRANS NPN 30V 3A DFN2020D-3

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2382-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2382-2-ND
Single Bipolar Transistors 1727-2382-2-ND
Bipolar (BJT) Transistor NPN 30V 3A 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor NPN 30V 3A 600mW Surface Mount DFN2020D-3

Buy Now Datasheet
IC TRANS NPN 30V 3A SOT1061 - 554-PBSS4330PASX - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
IC TRANS NPN 30V 3A SOT1061
554-PBSS4330PASX
IC TRANS NPN 30V 3A SOT1061 554-PBSS4330PASX
IC TRANS NPN 30V 3A SOT1061

IC TRANS NPN 30V 3A SOT1061

Supplier's Site
Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia - 98Y2301 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia
98Y2301
Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia 98Y2301
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:210MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:210MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4330PASX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4330PASX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4330PASX
TRANS NPN 30V 3A DFN2020D-3

TRANS NPN 30V 3A DFN2020D-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4330PASX
Bipolar Transistors - BJT PBSS4330PASX
Bipolar Transistors - BJT 30V 3A NPN low VCEsat (BISS) trans

Bipolar Transistors - BJT 30V 3A NPN low VCEsat (BISS) trans

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4330PASX PBSS4330PASX 1727-2382-2-ND 554-PBSS4330PASX 98Y2301 PBSS4330PASX PBSS4330PASX
Product Name 30 V, 3 A NPN low VCEsat transistor Single Bipolar Transistors Single Bipolar Transistors IC TRANS NPN 30V 3A SOT1061 Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN NPN; NPN NPN
Package Type SOT1061D 3-UDFN Exposed Pad 3-UDFN Exposed Pad TO-3
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 30 volts 30 volts
Output Power 0.6000 watts
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