NPN low V<sub>CEsat</sub> transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package measuring 2 mm × 2 mm × 0.65 mm, with exposed heat sink and soldarable side pads. Rated for a collector-emitter voltage of 30 V, collector current of 3 A, and peak collector current of 5 A. Collector-emitter saturation resistance is 75 to 100 mΩ at I<sub>C</sub> = 3 A and I<sub>B</sub> = 300 mA. Junction temperature range up to 175 °C. PNP complement is PBSS5330PAS.
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.
PNP complement: PBSS5330PAS
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 30V 3A 600mW Surface Mount DFN2020D-3
PBSS4330PAS - 30 V, 3 A NPN low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS4330PASX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 3 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 3 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4330PASX can be used for catalog matching and distributor lookup.
IC TRANS NPN 30V 3A SOT1061
TRANS NPN 30V 3A DFN2020D-3
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:210MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:180hFE; Transistor RoHS Compliant: Yes
Bipolar Transistors - BJT 30V 3A NPN low VCEsat (BISS) trans
TRANS NPN 30V 3A DFN2020D-3
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4330PASX | 1727-2382-2-ND | 276-PBSS4330PASX | 554-PBSS4330PASX | PBSS4330PASX | 98Y2301 | PBSS4330PASX | PBSS4330PASX |
| Product Name | 30 V, 3 A NPN low VCEsat transistor | Single Bipolar Transistors | 30 V 3 A DFN Bipolar Transistor | IC TRANS NPN 30V 3A SOT1061 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar, Aec-Q101, Npn, 30V; Transistor Polarity Nexperia | Bipolar Transistors - BJT | Single Bipolar Transistors |
| Package Type | SOT1061D SOT1061D | 3-UDFN Exposed Pad | TO-3 | 3-UDFN Exposed Pad | ||||
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | ||||
| Transistor Technology / Material | SILICON | |||||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps |
