Nexperia B.V. 50 V low VCEsat NPN transistor PBSS4350Z,135

Description
NPN low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350Z Features and benefits Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE ) at high IC Higher efficiency leading to less heat generation Applications Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO) Peripheral drivers Driver in low supply voltage applications, for example lamps, LEDs Inductive load driver, for example relays, buzzers, motors
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Description
NPN low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350Z Features and benefits Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE ) at high IC Higher efficiency leading to less heat generation Applications Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO) Peripheral drivers Driver in low supply voltage applications, for example lamps, LEDs Inductive load driver, for example relays, buzzers, motors
Request a Quote
Datasheet
Datasheet Summary
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NPN transistor designed for power management and switching applications, housed in a SOT223 (SC-73) surface-mount package measuring 6.5 mm x 3.5 mm x 1.65 mm. It has a maximum collector-emitter voltage of 50 V, continuous collector current of 3 A, and peak collector current of 5 A. The device features a low collector-emitter saturation resistance of 110 to 145 mΩ at 2 A collector current and 200 mA base current, and a DC current gain (hFE) of at least 100 at 2 A collector current. Operating junction temperature ranges from -65 °C to 150 °C. The part is not automotive qualified and meets no specified environmental or reliability standards beyond IEC 60134 for absolute maximum ratings.

Datasheet Summary
Powered by GS/AI

NPN transistor designed for power management and switching applications, housed in a SOT223 (SC-73) surface-mount package measuring 6.5 mm x 3.5 mm x 1.65 mm. It has a maximum collector-emitter voltage of 50 V, continuous collector current of 3 A, and peak collector current of 5 A. The device features a low collector-emitter saturation resistance of 110 to 145 mΩ at 2 A collector current and 200 mA base current, and a DC current gain (hFE) of at least 100 at 2 A collector current. Operating junction temperature ranges from -65 °C to 150 °C. The part is not automotive qualified and meets no specified environmental or reliability standards beyond IEC 60134 for absolute maximum ratings.

Suppliers

Company
Product
Description
Supplier Links
50 V low VCEsat NPN transistor - PBSS4350Z,135 - Nexperia B.V.
Nijmegen, Netherlands
50 V low VCEsat NPN transistor
PBSS4350Z,135
50 V low VCEsat NPN transistor PBSS4350Z,135
NPN low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350Z Features and benefits Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE ) at high IC Higher efficiency leading to less heat generation Applications Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO) Peripheral drivers Driver in low supply voltage applications, for example lamps, LEDs Inductive load driver, for example relays, buzzers, motors

NPN low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5350Z

Features and benefits

  • Low collector-emitter saturation voltage
  • High collector current capability: IC and ICM
  • High collector current gain (hFE ) at high IC
  • Higher efficiency leading to less heat generation

Applications

  • Power management
    • DC/DC converters
    • Supply line switching
    • Battery charger
    • Linear voltage regulation (LDO)
  • Peripheral drivers
    • Driver in low supply voltage applications, for example lamps, LEDs
    • Inductive load driver, for example relays, buzzers, motors
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS4350Z,135DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4350Z,135DKR-ND
Single Bipolar Transistors 1727-PBSS4350Z,135DKR-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4350Z,135CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4350Z,135CT-ND
Single Bipolar Transistors 1727-PBSS4350Z,135CT-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4350Z,135TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4350Z,135TR-ND
Single Bipolar Transistors 1727-PBSS4350Z,135TR-ND
Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 2W Surface Mount SOT-223

Buy Now Datasheet
Singapore, Singapore
Automotive 50V 3A 2000mW Bipolar Transistor
276-PBSS4350Z,135
Automotive 50V 3A 2000mW Bipolar Transistor 276-PBSS4350Z,135
Trans GP BJT NPN 50V 3A 2000mW Automotive 4-Pin(3+Tab) SC-73 T/R Product overview: PBSS4350Z,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 3A, 2000mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 3A, 2000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4350Z,135 can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 50V 3A 2000mW Automotive 4-Pin(3+Tab) SC-73 T/R Product overview: PBSS4350Z,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 3A, 2000mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 3A, 2000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4350Z,135 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4350Z,135 - 1086489-PBSS4350Z,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4350Z,135
1086489-PBSS4350Z,135
TRANSISTORS - Transistors (BJT) - Single - PBSS4350Z,135 1086489-PBSS4350Z,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086489-PBSS4350Z,13 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 290mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086489-PBSS4350Z,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 290mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 2A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL - 554-PBSS4350Z,135 - Utmel Electronic Limited
Hong Kong, China
NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL
554-PBSS4350Z,135
NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL 554-PBSS4350Z,135
NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL

NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4350Z,135 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4350Z,135
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4350Z,135
TRANS NPN 50V 3A SOT223

TRANS NPN 50V 3A SOT223

Supplier's Site
Single Bipolar Transistors - PBSS4350Z,135 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS4350Z,135
Single Bipolar Transistors PBSS4350Z,135
TRANS NPN 50V 3A SOT223

TRANS NPN 50V 3A SOT223

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
PBSS4350Z,135
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT PBSS4350Z,135
50V 2W 100@2A,2V 3A NPN SOT-223-3 Bipolar Transistors - BJT ROHS

50V 2W 100@2A,2V 3A NPN SOT-223-3 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 1.35 W, 3 A, 200 Rohs Compliant Nexperia - 93X4537 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 1.35 W, 3 A, 200 Rohs Compliant Nexperia
93X4537
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 1.35 W, 3 A, 200 Rohs Compliant Nexperia 93X4537
Bipolar (BJT) Single Transistor, NPN, 50 V, 100 MHz, 1.35 W, 3 A, 200 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 50 V, 100 MHz, 1.35 W, 3 A, 200 RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4350Z,135 1727-PBSS4350Z,135DKR-ND 276-PBSS4350Z,135 1086489-PBSS4350Z,135 554-PBSS4350Z,135 PBSS4350Z,135 PBSS4350Z,135 PBSS4350Z,135 93X4537
Product Name 50 V low VCEsat NPN transistor Single Bipolar Transistors Automotive 50V 3A 2000mW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - PBSS4350Z,135 NEXPERIA - PBSS4350Z,135 - TRANSISTOR, NPN, SOT-223, REEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 1.35 W, 3 A, 200 Rohs Compliant Nexperia
Package Type SOT223; SOT223 SOT223 SOT223; TO-261-4, TO-261AA SOT3; SOT-223 AEC-Q100 SOT223; TO-261-4, TO-261AA SOT223 TO-3
Polarity NPN NPN; NPN NPN; NPN NPN; NPN NPN NPN
Transistor Grade / Operating Range Automotive
Transistor Technology / Material SILICON
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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