Nexperia B.V. 30 V, 2.6 A NPN low VCEsat transistor PBSS4032NT,215

Description
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits
  • 30 V, 2.6 A NPN low VCEsat transistor - PBSS4032NT,215 - Nexperia B.V.
    Nexperia B.V.
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  • TRANSISTORS - Transistors (BJT) - Single - PBSS4032NT,215 - 1086445-PBSS4032NT,215 - Win Source Electronics
    Win Source Electronics
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  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4032NT,215 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 2.6 A NPN low VCEsat transistor - PBSS4032NT,215 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 2.6 A NPN low VCEsat transistor
PBSS4032NT,215
30 V, 2.6 A NPN low VCEsat transistor PBSS4032NT,215
NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits

NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PT

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • Optimized switching time
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation

Applications

  • DC-to-DC conversion
  • Battery-driven devices
  • Power management
  • Charging circuits
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-4338-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-4338-6-ND
Single Bipolar Transistors 1727-4338-6-ND
Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-4338-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-4338-1-ND
Single Bipolar Transistors 1727-4338-1-ND
Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-4338-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-4338-2-ND
Single Bipolar Transistors 1727-4338-2-ND
Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 30V 2.6A 180MHz 1.1W Surface Mount TO-236AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
30 V 2.6 A Bipolar Transistor
276-PBSS4032NT,215
30 V 2.6 A Bipolar Transistor 276-PBSS4032NT,215
PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4032NT,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 2.6 A. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 2.6 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4032NT,215 can be used for catalog matching and distributor lookup.

PBSS4032NT - 30 V, 2.6 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4032NT,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 2.6 A. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 2.6 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4032NT,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4032NT,215 - 1086445-PBSS4032NT,215 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4032NT,215
1086445-PBSS4032NT,215
TRANSISTORS - Transistors (BJT) - Single - PBSS4032NT,215 1086445-PBSS4032NT,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086445-PBSS4032NT,2 15 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236AB (SOT23) Maximum Current Collector: 2.6A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 320mV @ 300mA, 3A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 300 @ 1A, 2V Maximum Power Dissipation: 1.1W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086445-PBSS4032NT,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 2.6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 320mV @ 300mA, 3A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 300 @ 1A, 2V
Maximum Power Dissipation: 1.1W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 30 V, 180 Mhz, 600 Mw, 2.6 A, 100 Rohs Compliant Nexperia - 93X4519 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 30 V, 180 Mhz, 600 Mw, 2.6 A, 100 Rohs Compliant Nexperia
93X4519
Bipolar (Bjt) Single Transistor, Npn, 30 V, 180 Mhz, 600 Mw, 2.6 A, 100 Rohs Compliant Nexperia 93X4519
Bipolar (BJT) Single Transistor, NPN, 30 V, 180 MHz, 600 mW, 2.6 A, 100 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 30 V, 180 MHz, 600 mW, 2.6 A, 100 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4032NT,215 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4032NT,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4032NT,215
TRANS NPN 30V 2.6A TO236AB

TRANS NPN 30V 2.6A TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4032NT,215 1727-4338-6-ND 276-PBSS4032NT,215 1086445-PBSS4032NT,215 93X4519 PBSS4032NT,215
Product Name 30 V, 2.6 A NPN low VCEsat transistor Single Bipolar Transistors 30 V 2.6 A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - PBSS4032NT,215 Bipolar (Bjt) Single Transistor, Npn, 30 V, 180 Mhz, 600 Mw, 2.6 A, 100 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; TO-236AB (SOT23) TO-3 AEC-Q100
Polarity NPN NPN; NPN NPN
Transistor Grade / Operating Range Automotive
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