The Nexperia NX138BKM is a 60V N-channel Trench MOSFET designed for various applications including relay drivers and high-speed line drivers. It features a low threshold voltage and very fast switching capabilities, making it suitable for switching circuits and low-side load switching. The device has a maximum drain current of 380 mA at a gate-source voltage of 10V and a low on-state resistance of 1.8 to 2.3 Ω at the same conditions. It is housed in a compact DFN1006-3 package, measuring 1 mm x 0.6 mm x 0.48 mm, and is compliant with RoHS standards. The MOSFET also offers ESD protection greater than 2 kV HBM, enhancing its reliability in various electronic applications.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 380mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount SOT-883
N-Channel 60V 380mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount SOT-883
N-Channel 60V 380mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount SOT-883
MOSFET N-CH 60V 380MA DFN1006-3 Product overview: NX138BKMYL from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 380MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 380MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NX138BKMYL can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 60V, 0.38A, DFN1006 ROHS COMPLIANT: YES
MOSFET N-CH 60V 380MA DFN1006-3
MOSFET N-CH 60V 380MA DFN1006-3
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX138BKMYL | 1727-NX138BKMYLCT-ND | 278-NX138BKMYL | 93AH0337 | NX138BKMYL | NX138BKMYL |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | 60V 380MA MOSFET Transistor | Mosfet, N-Ch, 60V, 0.38A, Dfn1006 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| IDSS | 380000 milliamps | 380 milliamps | ||||
| VGS(off) | 20 volts | |||||
| PD | 380 milliwatts | 2.8 milliwatts | 380 milliwatts |
