Nexperia B.V. 60 V, 3 A NPN low VCEsat transistor PBSS4360PASX

Description
NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5360PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Description
NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5360PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Datasheet
Datasheet Summary
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NPN low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless SMD package with exposed heat sink, rated for 60 V collector-emitter voltage and 3 A continuous collector current. Peak collector current is 6 A for pulses up to 1 ms. Collector-emitter saturation resistance is 73 to 108 mΩ at 3 A collector current and 300 mA base current. Maximum junction temperature is 175 °C. Suitable for load switching, battery-powered devices, and power management applications. PNP complement is PBSS5360PAS.

Datasheet Summary
Powered by GS/AI

NPN low VCEsat transistor in a DFN2020D-3 (SOT1061D) leadless SMD package with exposed heat sink, rated for 60 V collector-emitter voltage and 3 A continuous collector current. Peak collector current is 6 A for pulses up to 1 ms. Collector-emitter saturation resistance is 73 to 108 mΩ at 3 A collector current and 300 mA base current. Maximum junction temperature is 175 °C. Suitable for load switching, battery-powered devices, and power management applications. PNP complement is PBSS5360PAS.

Suppliers

Company
Product
Description
Supplier Links
60 V, 3 A NPN low VCEsat transistor - PBSS4360PASX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 3 A NPN low VCEsat transistor
PBSS4360PASX
60 V, 3 A NPN low VCEsat transistor PBSS4360PASX
NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5360PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5360PAS

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with soldarable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS4360PASXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4360PASXDKR-ND
Single Bipolar Transistors 1727-PBSS4360PASXDKR-ND
Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

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Single Bipolar Transistors - 1727-PBSS4360PASXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4360PASXCT-ND
Single Bipolar Transistors 1727-PBSS4360PASXCT-ND
Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

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Single Bipolar Transistors - 1727-PBSS4360PASXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4360PASXTR-ND
Single Bipolar Transistors 1727-PBSS4360PASXTR-ND
Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor NPN 60V 3A 160MHz 600mW Surface Mount DFN2020D-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4360PASX
Bipolar Transistors - BJT PBSS4360PASX
Bipolar Transistors - BJT PBSS4360PAS/HUSON3/R EEL 7" Q1/

Bipolar Transistors - BJT PBSS4360PAS/HUSON3/REEL 7" Q1/

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4360PASX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4360PASX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4360PASX
TRANS NPN 60V 3A DFN2020D-3

TRANS NPN 60V 3A DFN2020D-3

Supplier's Site
Transistor, Aec-Q101, Bipol, Npn, 60V; Transistor Polarity Nexperia - 82Y7117 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Aec-Q101, Bipol, Npn, 60V; Transistor Polarity Nexperia
82Y7117
Transistor, Aec-Q101, Bipol, Npn, 60V; Transistor Polarity Nexperia 82Y7117
TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Single Bipolar Transistors - PBSS4360PASX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS4360PASX
Single Bipolar Transistors PBSS4360PASX
TRANS NPN 60V 3A DFN2020D-3

TRANS NPN 60V 3A DFN2020D-3

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number PBSS4360PASX 1727-PBSS4360PASXDKR-ND PBSS4360PASX PBSS4360PASX 82Y7117 PBSS4360PASX
Product Name 60 V, 3 A NPN low VCEsat transistor Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Aec-Q101, Bipol, Npn, 60V; Transistor Polarity Nexperia Single Bipolar Transistors
Package Type SOT1061D SOT1061D 3-UDFN Exposed Pad AEC-Q101 TO-3 3-UDFN Exposed Pad
Polarity NPN NPN NPN; NPN
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 3000 milliamps 3000 milliamps
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