NX7002AK is a 60 V, single N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted plastic package. It has a drain-source on-state resistance of 3 to 4.5 Ω at V_{GS} = 10 V and I_D = 100 mA, with a continuous drain current of 190 mA when mounted on an FR4 PCB with a 1 cm² drain pad. The device supports a maximum junction temperature of 150 °C and is ESD protected. Thermal resistance from junction to ambient is 330 to 380 K/W under the same mounting condition. The gate-source threshold voltage ranges from 1.1 to 2.1 V.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 190MA TO236AB
MOSFET, SINGLE, N CHANNEL, 60V, 0.19A, SOT23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:265mW RoHS Compliant: Yes
MOSFET N-CH 60V 190MA TO236AB
60V 190mA 4.5Ω@10V,100mA 2.1V@250uA N Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX7002AK,215 | 1727-1289-1-ND | 1364831 | NX7002AK,215 | 43W6129 | NX7002AK,215 | NX7002AK,215 |
| Product Name | 60 V, single N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 300000 milliamps | 190 milliamps | 190 milliamps | ||||
| VGS(off) | 20 volts | 2.1 volts | |||||
| PD | 265 milliwatts | 265 milliwatts | 265 milliwatts | 265 milliwatts |
