N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 190MA TO236AB
MOSFET, SINGLE, N CHANNEL, 60V, 0.19A, SOT23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:265mW RoHS Compliant: Yes
MOSFET N-CH 60V 190MA TO236AB
60V 190mA 4.5Ω@10V,100mA 2.1V@250uA N Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX7002AK,215 | 1364831 | 1727-1289-1-ND | NX7002AK,215 | 43W6129 | NX7002AK,215 | NX7002AK,215 |
| Product Name | 60 V, single N-channel Trench MOSFET | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Single, N Channel, 60V, 0.19A, Sot23; Channel Type Nexperia | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 300000 milliamps | 190 milliamps | 190 milliamps | ||||
| VGS(off) | 20 volts | 2.1 volts | |||||
| PD | 265 milliwatts | 265 milliwatts | 265 milliwatts | 265 milliwatts |
