Nexperia B.V. Bipolar Transistor Arrays PBSS4041SN,115

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 6.7A 130MHz 2.3W Surface Mount 8-SO
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 6.7A 130MHz 2.3W Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - 1727-5109-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-5109-2-ND
Bipolar Transistor Arrays 1727-5109-2-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 6.7A 130MHz 2.3W Surface Mount 8-SO

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 6.7A 130MHz 2.3W Surface Mount 8-SO

Buy Now Datasheet
Singapore
60 V 6.7 A SOIC Bipolar Transistor
277-PBSS4041SN,115
60 V 6.7 A SOIC Bipolar Transistor 277-PBSS4041SN,115
PBSS4041SN - 60 V, 6.7 A NPN/NPN low V_CEsat (BISS) transistor SOIC 8-Pin Product overview: PBSS4041SN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6.7 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6.7 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4041SN,115 can be used for catalog matching and distributor lookup.

PBSS4041SN - 60 V, 6.7 A NPN/NPN low V_CEsat (BISS) transistor SOIC 8-Pin Product overview: PBSS4041SN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6.7 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6.7 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4041SN,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4041SN,115 - 791387-PBSS4041SN,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4041SN,115
791387-PBSS4041SN,115
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4041SN,115 791387-PBSS4041SN,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791387-PBSS4041SN,11 5 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 2.3W Transistor Type: 2 NPN (Dual) Frequency - Transition: 130MHz Family Name: PBSS4032SN Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Current - Collector (Ic) (Maximum): 6.7A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 350mV @ 350mA, 7A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 150 @ 4A, 2V Alternative Parts (Cross-Reference): PBSS4041SN,118; PBSS4041SN; Introduction Date: May 31, 2010 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791387-PBSS4041SN,115
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Power - Max: 2.3W
Transistor Type: 2 NPN (Dual)
Frequency - Transition: 130MHz
Family Name: PBSS4032SN
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Current - Collector (Ic) (Maximum): 6.7A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 350mV @ 350mA, 7A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 150 @ 4A, 2V
Alternative Parts (Cross-Reference): PBSS4041SN,118; PBSS4041SN;
Introduction Date: May 31, 2010
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4041SN,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4041SN,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4041SN,115
TRANS 2NPN 60V 6.7A 8SO

TRANS 2NPN 60V 6.7A 8SO

Supplier's Site
Transistor,npn/npn,60V,so8; Transistor Polarity Nexperia - 84R0227 - Newark, An Avnet Company
Chicago, IL, United States
Transistor,npn/npn,60V,so8; Transistor Polarity Nexperia
84R0227
Transistor,npn/npn,60V,so8; Transistor Polarity Nexperia 84R0227
TRANSISTOR,NPN/NPN,6 0V,SO8; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; DC Collector Current:6.7A; Power Dissipation Pd:2.3W; DC Current Gain hFE:300hFE; No. of Pins:8Pins; Transistor Mounting:Surface Mount RoHS Compliant: Yes

TRANSISTOR,NPN/NPN,60V,SO8; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; DC Collector Current:6.7A; Power Dissipation Pd:2.3W; DC Current Gain hFE:300hFE; No. of Pins:8Pins; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site
Bipolar Transistor Arrays - PBSS4041SN,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
PBSS4041SN,115
Bipolar Transistor Arrays PBSS4041SN,115
TRANS 2NPN 60V 6.7A 8SO

TRANS 2NPN 60V 6.7A 8SO

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1727-5109-2-ND 277-PBSS4041SN,115 791387-PBSS4041SN,115 PBSS4041SN,115 84R0227 PBSS4041SN,115
Product Name Bipolar Transistor Arrays 60 V 6.7 A SOIC Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays - PBSS4041SN,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor,npn/npn,60V,so8; Transistor Polarity Nexperia Bipolar Transistor Arrays
Polarity NPN NPN NPN 2 NPN (Dual); NPN
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 8-SO TO-3 8-SOIC (0.154", 3.90mm Width)
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR)
IC(max) 1.00E-4 milliamps 6700 milliamps 6700 milliamps
Power Gain 150 dB
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