Nexperia B.V. 30 V, 1 A NPN/PNP low VCEsat transistor PBSS4130PANP,115

Description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 1 A NPN/PNP low VCEsat transistor - PBSS4130PANP,115 - Nexperia B.V.
Nijmegen, Netherlands
30 V, 1 A NPN/PNP low VCEsat transistor
PBSS4130PANP,115
30 V, 1 A NPN/PNP low VCEsat transistor PBSS4130PANP,115
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • AEC-Q101 qualified

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-1070-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1070-2-ND
Bipolar Transistor Arrays 1727-1070-2-ND
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-1070-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1070-6-ND
Bipolar Transistor Arrays 1727-1070-6-ND
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-1070-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1070-1-ND
Bipolar Transistor Arrays 1727-1070-1-ND
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4130PANP,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4130PANP,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4130PANP,115
TRANS NPN/PNP 30V 1A 6HUSON

TRANS NPN/PNP 30V 1A 6HUSON

Supplier's Site
Bipolar Array, Npn/pnp, 30V, 1A/dfn2020 Rohs Compliant Nexperia - 24AJ1607 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Array, Npn/pnp, 30V, 1A/dfn2020 Rohs Compliant Nexperia
24AJ1607
Bipolar Array, Npn/pnp, 30V, 1A/dfn2020 Rohs Compliant Nexperia 24AJ1607
BIPOLAR ARRAY, NPN/PNP, 30V, 1A/DFN2020 ROHS COMPLIANT: YES

BIPOLAR ARRAY, NPN/PNP, 30V, 1A/DFN2020 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4130PANP,115 1727-1070-2-ND PBSS4130PANP,115 24AJ1607
Product Name 30 V, 1 A NPN/PNP low VCEsat transistor Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Array, Npn/pnp, 30V, 1A/dfn2020 Rohs Compliant Nexperia
Polarity Complementary NPN; PNP NPN; PNP
Package Type SOT1118 6-UFDFN Exposed Pad AEC-Q100 TO-3
Transistor Grade / Operating Range Automotive
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