30 V, 1 A NPN/PNP low VCEsat (BISS) transistor in a leadless DFN2020-6 (SOT1118) surface-mount package measuring 2 x 2 x 0.65 mm. The device features a maximum collector current of 1 A, peak collector current of 2 A, and collector-emitter saturation voltage as low as 75 mV for the NPN transistor and 85 mV for the PNP transistor under specified conditions. It has a DC current gain (hFE) up to 370 for the NPN and 350 for the PNP transistor at 100 mA collector current. Total power dissipation reaches up to 1450 mW for the NPN and 2000 mW for the PNP transistor under optimal thermal conditions. The part is AEC-Q101 qualified for automotive applications.
NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4130PAN-Q
PNP/PNP complement: PBSS5130PAP-Q
Features and benefits
Applications
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array NPN, PNP 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)
TRANS NPN/PNP 30V 1A 6HUSON
BIPOLAR ARRAY, NPN/PNP, 30V, 1A/DFN2020 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4130PANP,115 | 1727-1070-2-ND | PBSS4130PANP,115 | 24AJ1607 |
| Product Name | 30 V, 1 A NPN/PNP low VCEsat transistor | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Array, Npn/pnp, 30V, 1A/dfn2020 Rohs Compliant Nexperia |
| Package Type | SOT1118 SOT1118 | 6-UFDFN Exposed Pad | AEC-Q100 | TO-3 |
| Polarity | NPN; PNP | NPN; PNP | ||
| Transistor Grade / Operating Range | Automotive |
