P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 1.5A (Ta) 340mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
P-Channel 30V 1.5A (Ta) 340mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
P-Channel 30V 1.5A (Ta) 340mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
MOSFET, P-CH, 30V, 1.5A, SOT-23 ROHS COMPLIANT: YES
NXV90EP/SOT23/TO-236
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NXV90EPR | 1727-NXV90EPRTR-ND | 21AJ6678 | NXV90EPR |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 30V, 1.5A, Sot-23 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -1500 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 340 milliwatts |