Nexperia B.V. TRANSISTORS - Transistors (BJT) - Arrays - PBSS4350SS,115 PBSS4350SS,115

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086486-PBSS4350SS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Maximum Current Collector: 2.7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 340mV @ 270mA, 2.7A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 300 @ 1A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

PBSS4350SS - 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor SOIC 8-Pin Product overview: PBSS4350SS,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 2.7 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 2.7 A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4350SS,115 can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 2.7A 2W Surface Mount 8-SO