Nexperia B.V. 60 V, 1 A NPN/NPN low VCEsat transistor PBSS4160PANSX

Description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A NPN/NPN low VCEsat transistor - PBSS4160PANSX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A NPN/NPN low VCEsat transistor
PBSS4160PANSX
60 V, 1 A NPN/NPN low VCEsat transistor PBSS4160PANSX
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - PBSS4160PANSX - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
PBSS4160PANSX
Bipolar Transistor Arrays PBSS4160PANSX
TRANS 2NPN 60V 1A DFN2020D-6

TRANS 2NPN 60V 1A DFN2020D-6

Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-2516-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2516-1-ND
Bipolar Transistor Arrays 1727-2516-1-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS4160PANSXTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4160PANSXTR-ND
Bipolar Transistor Arrays 1727-PBSS4160PANSXTR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS4160PANSXDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4160PANSXDKR-ND
Bipolar Transistor Arrays 1727-PBSS4160PANSXDKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 964648-PBSS4160PANSX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
964648-PBSS4160PANSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 964648-PBSS4160PANSX
Win Source Part Number: 964648-PBSS4160PANSX Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 370mW Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 1A Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): DPLS160-7; DCP52-16-13; DPLS160V-7; NSS60101DMTTBG; NSV60101DMTWTBG; BSR16; ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Nexperia USA Inc. Other Names: 568-12955-6-ND,568-1 2955-1-ND,568-12955- 2-ND,568-12955-1,PBS S4160PANSX-ND,1727-2 516-6,934068999115,5 68-62955-6,1727-2516 -1,1727-2516-2,568-6 2955-6-ND,2156-PBSS4 160PANSX-NEX,NEXNEXP BSS4160PANSX Base Product Number: PBSS4160

Win Source Part Number: 964648-PBSS4160PANSX
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 370mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020D-6
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): DPLS160-7; DCP52-16-13; DPLS160V-7; NSS60101DMTTBG; NSV60101DMTWTBG; BSR16;
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 568-12955-6-ND,568-12955-1-ND,568-12955-2-ND,568-12955-1,PBSS4160PANSX-ND,1727-2516-6,934068999115,568-62955-6,1727-2516-1,1727-2516-2,568-62955-6-ND,2156-PBSS4160PANSX-NEX,NEXNEXPBSS4160PANSX
Base Product Number: PBSS4160

Buy Now Datasheet
Singapore
60 V 1 A Bipolar Transistor
277-PBSS4160PANSX
60 V 1 A Bipolar Transistor 277-PBSS4160PANSX
PBSS4160PANS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product overview: PBSS4160PANSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4160PANSX can be used for catalog matching and distributor lookup.

PBSS4160PANS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product overview: PBSS4160PANSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4160PANSX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Trans, Dual Npn, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia - 99Y2058 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Npn, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia
99Y2058
Trans, Dual Npn, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia 99Y2058
TRANS, DUAL NPN, AEC-Q101, 60V, SOT1118D; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-1118; No. of RoHS Compliant: Yes

TRANS, DUAL NPN, AEC-Q101, 60V, SOT1118D; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-1118; No. of RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4160PANSX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4160PANSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4160PANSX
TRANS 2NPN 60V 1A DFN2020D-6

TRANS 2NPN 60V 1A DFN2020D-6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4160PANSX
Bipolar Transistors - BJT PBSS4160PANSX
Bipolar Transistors - BJT 60V 1A NPN/NPN

Bipolar Transistors - BJT 60V 1A NPN/NPN

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4160PANSX PBSS4160PANSX 1727-2516-1-ND 964648-PBSS4160PANSX 277-PBSS4160PANSX 99Y2058 PBSS4160PANSX PBSS4160PANSX
Product Name 60 V, 1 A NPN/NPN low VCEsat transistor Bipolar Transistor Arrays Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 60 V 1 A Bipolar Transistor Trans, Dual Npn, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN 2 NPN (Dual); NPN NPN NPN NPN
Package Type SOT1118D 6-UDFN Exposed Pad 6-UDFN Exposed Pad SOT3 TO-3 AEC-Q101
IC(max) 1000 milliamps 1000 milliamps 1000 milliamps
VCEO 60 volts 60 volts
Operating Frequency 175 MHz 175 MHz
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