NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.
Features and benefits
Applications
TRANS 2NPN 60V 1A DFN2020D-6
PBSS4160PANS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product overview: PBSS4160PANSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4160PANSX can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 175MHz 370mW Surface Mount DFN2020D-6
Win Source Part Number: 964648-PBSS4160PANSX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 370mW
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020D-6
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): DPLS160-7; DCP52-16-13; DPLS160V-7; NSS60101DMTTBG; NSV60101DMTWTBG; BSR16;
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 568-12955-6-ND,568-1
Base Product Number: PBSS4160
Bipolar Transistors - BJT 60V 1A NPN/NPN
TRANS, DUAL NPN, AEC-Q101, 60V, SOT1118D; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:510mW; DC Collector Current:1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-1118; No. of RoHS Compliant: Yes
TRANS 2NPN 60V 1A DFN2020D-6
| Nexperia B.V. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PBSS4160PANSX | PBSS4160PANSX | 277-PBSS4160PANSX | 1727-2516-1-ND | 964648-PBSS4160PANSX | PBSS4160PANSX | 99Y2058 | PBSS4160PANSX |
| Product Name | 60 V, 1 A NPN/NPN low VCEsat transistor | Bipolar Transistor Arrays | 60 V 1 A Bipolar Transistor | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays | Bipolar Transistors - BJT | Trans, Dual Npn, Aec-Q101, 60V, Sot1118D; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | 2 NPN (Dual); NPN | NPN | NPN | NPN | |||
| Package Type | SOT1118D | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | SOT3 | TO-3 | AEC-Q101 | ||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | |||||
| VCEO | 60 volts | 60 volts | ||||||
| Operating Frequency | 175 MHz | 175 MHz |
