Nexperia B.V. 30 V, 2 A NPN low VCEsat transistor PBSS4230QAZ

Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 30 V, 2 A NPN low VCEsat transistor - PBSS4230QAZ - Nexperia B.V.
    Nexperia B.V.
  • PBSS4230QAZ - Rochester Electronics
    Rochester Electronics
  • Single Bipolar Transistors - 1727-PBSS4230QAZTR-ND - DigiKey
    DigiKey
  • Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia - 68Y7774 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 2 A NPN low VCEsat transistor - PBSS4230QAZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 2 A NPN low VCEsat transistor
PBSS4230QAZ
30 V, 2 A NPN low VCEsat transistor PBSS4230QAZ
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5230QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5230QA.

Features and benefits

  • Very Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirments
  • Solderable side pads

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
- PBSS4230QAZ - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PBSS4230QAZ
PBSS4230QAZ
Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN

Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS4230QAZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4230QAZTR-ND
Single Bipolar Transistors 1727-PBSS4230QAZTR-ND
Bipolar (BJT) Transistor NPN 30V 2A 190MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 30V 2A 190MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia - 68Y7774 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia
68Y7774
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia 68Y7774
Bipolar (BJT) Single Transistor, NPN, 30 V, 190 MHz, 325 mW, 2 A, 100 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 30 V, 190 MHz, 325 mW, 2 A, 100 RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4230QAZ
Bipolar Transistors - BJT PBSS4230QAZ
Bipolar Transistors - BJT 30 V, 2 A NPN low VCEsat (BISS)

Bipolar Transistors - BJT 30 V, 2 A NPN low VCEsat (BISS)

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4230QAZ PBSS4230QAZ 1727-PBSS4230QAZTR-ND 68Y7774 PBSS4230QAZ
Product Name 30 V, 2 A NPN low VCEsat transistor Single Bipolar Transistors Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia Bipolar Transistors - BJT
Package Type SOT1215 SOT1215 SOT1215 3-XDFN Exposed Pad TO-3
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