NPN low VCEsat (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 2 A, and a peak collector current of 3 A. The collector-emitter saturation resistance is 135 to 180 mΩ at a collector current of 1 A and base current of 100 mA. Total power dissipation reaches up to 1000 mW when mounted on a 4-layer copper PCB with a 1 cm² collector pad. It is AEC-Q101 qualified and operates from -55 °C to 150 °C ambient temperature. PNP complement: PBSS5230QA.
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5230QA.
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 30V 2A 190MHz 325mW Surface Mount DFN1010D-3
Small Signal Bipolar Transistor, 2A I(C), 1-Element, NPN
Bipolar (BJT) Single Transistor, NPN, 30 V, 190 MHz, 325 mW, 2 A, 100 RoHS Compliant: Yes
Bipolar Transistors - BJT 30 V, 2 A NPN low VCEsat (BISS)
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4230QAZ | 1727-PBSS4230QAZTR-ND | PBSS4230QAZ | 68Y7774 | PBSS4230QAZ |
| Product Name | 30 V, 2 A NPN low VCEsat transistor | Single Bipolar Transistors | Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 2 A, 100 Rohs Compliant Nexperia | Bipolar Transistors - BJT | |
| Package Type | SOT1215 SOT1215 | 3-XDFN Exposed Pad | SOT1215 | TO-3 |
