NPN low V\(_{CEsat}\) transistor in a small SOT23 (TO-236AB) surface-mounted plastic package, rated for 40 V collector-emitter voltage and 2 A continuous collector current. Peak collector current is 3 A for pulses up to 1 ms. Collector-emitter saturation voltage ranges from 45 mV to 320 mV depending on current, with saturation resistance of 140 to 200 mΩ at 500 mA collector and 50 mA base current. Total power dissipation is 300 mW on a standard footprint, rising to 480 mW with a 1 cm² collector pad. Operating junction temperature extends to 150 °C. AEC-Q101 qualified for automotive applications.
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5240T
Features and benefits
Applications
TRANS NPN 40V 2A TO-236AB
TRANS NPN 40V 2A TO-236AB
Bipolar (BJT) Transistor NPN 40V 2A 100MHz 300mW Surface Mount TO-236AB
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
Bipolar Transistors - BJT PBSS4240T/TO-236AB/R
TRANS NPN 40V 2A TO236AB
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4240TVL | 1727-PBSS4240TVLDKR-ND | 29AK2900 | PBSS4240TVL | PBSS4240TVL |
| Product Name | 40 V; 2 A NPN low VCEsat transistor | Single Bipolar Transistors | Transistor, Bipolar Rohs Compliant Nexperia | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-236AB |