N-channel 60 V logic level MOSFET in an LFPAK56 (Power SO8) package, rated for 175 °C junction temperature and compliant with AEC Q101 for automotive applications. It has a drain-source on-state resistance of 51 to 59 mΩ at V<sub>GS</sub> = 5 V and I<sub>D</sub> = 5 A, supports continuous drain current up to 16.7 A at 25 °C, and is repetitive avalanche rated with non-repetitive avalanche energy of 8.84 mJ. The gate-source voltage rating is ±10 V with a true logic level threshold of greater than 0.5 V at 175 °C.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
BUK9Y59-60E - N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y59-60E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y59-60E,115 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 60V 16.7A Auto LFPAK56
MOSFET N-Ch 60V 16.7A Auto LFPAK56
MOSFET N-Ch 60V 16.7A Auto LFPAK56
MOSFET Transistor, N Channel, 16.7 A, 60 V, 0.044 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET N-CH 60V 16.7A LFPAK56
MOSFET N-CH 60V 16.7A LFPAK56
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9Y59-60E,115 | 1727-1812-2-ND | 278-BUK9Y59-60E,115 | 1705446P | 1704900 | 90W4313 | BUK9Y59-60E,115 | BUK9Y59-60E,115 |
| Product Name | N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | N-Channel 60 V SOIC MOSFET Transistor | MOSFETs | MOSFETs | Mosfet Transistor, N Channel, 16.7 A, 60 V, 0.044 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 16700 milliamps | 16700 milliamps | ||||||
| VGS(off) | 10 volts | |||||||
| PD | 37 milliwatts | 37000 milliwatts |
