NPN low VCEsat transistor in a small SOT23 surface-mounted plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pin pitch. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 1 A, and a peak collector current of 2 A. The device has a collector-emitter saturation voltage of up to 500 mV at 1 A and 100 mA base current, and a saturation resistance of up to 500 mΩ under pulsed conditions. Total power dissipation is 300 mW on a standard footprint and 450 mW with a 1 cm² collector pad. Junction temperature ranges from -65 °C to 150 °C. The device meets IEC 60134 for limiting values and is not specified as automotive qualified.
NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5140T
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 40V 1A 150MHz 450mW Surface Mount TO-236AB
Bipolar (BJT) Transistor NPN 40V 1A 150MHz 450mW Surface Mount TO-236AB
Bipolar (BJT) Transistor NPN 40V 1A 150MHz 450mW Surface Mount TO-236AB
PBSS4140T - 40 V, 1 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4140T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 40 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4140T,215 can be used for catalog matching and distributor lookup.
40V 450mW 300@500mA,5V 1A NPN SOT-23 Bipolar Transistors - BJT ROHS
TRANS NPN 40V 1A TO236AB
TRANS NPN 40V 1A TO236AB
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 mW, 1 A, 300 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 mW, 1 A, 300 RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4140T,215 | 1727-3897-6-ND | 276-PBSS4140T,215 | PBSS4140T,215 | PBSS4140T,215 | PBSS4140T,215 | 93X4526 |
| Product Name | 40 V, 1 A NPN low VCEsat transistor | Single Bipolar Transistors | 40 V 1 A Bipolar Transistor | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar (Bjt) Single Transistor, Npn, 40 V, 300 Mw, 1 A, 300 Rohs Compliant Nexperia |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | ||
| Polarity | NPN | NPN | NPN; NPN | NPN | |||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | ||||
| VCEO | 40 volts | 40 volts | 40 volts | ||||
| fT | 150 MHz |
