Nexperia B.V. 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package GAN041-650WSBQ

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability

Applications

• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives

650 V, 35 mO Gallium Nitride (GaN) FET

650 V, 35 mO Gallium Nitride (GaN) FET

650 V, 35 mO Gallium Nitride (GaN) FET

N-Channel 650V 47.2A 187W Through Hole TO-247-3

Win Source Part Number: 1349696-GAN041-650WSBQ
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tube
Standard Package: 30
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 187W
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47.2A
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V

GAN041-650WSB/SOT429/TO-247 Product overview: GAN041-650WSBQ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GAN041-650WSBQ can be used for catalog matching and distributor lookup.