Nexperia B.V. N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 BUK9Y41-80E,115

Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
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Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote
Datasheet
Datasheet Summary
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N-channel 80 V logic level MOSFET in an LFPAK56 (SOT669) package designed for automotive applications, rated for 175 °C junction temperature and compliant with AEC-Q101. It has a maximum drain-source on-state resistance of 45 mΩ at 25 °C and 113 mΩ at 175 °C, with a continuous drain current of 24 A at 25 °C and 17 A at 100 °C. The device is repetitive avalanche rated with 25 mJ non-repetitive avalanche energy, and features a true logic level gate with a threshold voltage as low as 0.5 V at 175 °C. Thermal resistance from junction to mounting base is 2.33 K/W.

Datasheet Summary
Powered by GS/AI

N-channel 80 V logic level MOSFET in an LFPAK56 (SOT669) package designed for automotive applications, rated for 175 °C junction temperature and compliant with AEC-Q101. It has a maximum drain-source on-state resistance of 45 mΩ at 25 °C and 113 mΩ at 175 °C, with a continuous drain current of 24 A at 25 °C and 17 A at 100 °C. The device is repetitive avalanche rated with 25 mJ non-repetitive avalanche energy, and features a true logic level gate with a threshold voltage as low as 0.5 V at 175 °C. Thermal resistance from junction to mounting base is 2.33 K/W.

Suppliers

Company
Product
Description
Supplier Links
N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 - BUK9Y41-80E,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56
BUK9Y41-80E,115
N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 BUK9Y41-80E,115
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1500-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1500-6-ND
Single FETs, MOSFETs 1727-1500-6-ND
N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1500-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1500-2-ND
Single FETs, MOSFETs 1727-1500-2-ND
N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1500-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1500-1-ND
Single FETs, MOSFETs 1727-1500-1-ND
N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Singapore, Singapore
N-Channel 80 V SOIC MOSFET Transistor
278-BUK9Y41-80E,115
N-Channel 80 V SOIC MOSFET Transistor 278-BUK9Y41-80E,115
BUK9Y41-80E - N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y41-80E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y41-80E,115 can be used for catalog matching and distributor lookup.

BUK9Y41-80E - N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y41-80E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y41-80E,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325291-BUK9Y41-80E,115 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325291-BUK9Y41-80E,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325291-BUK9Y41-80E,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325291-BUK9Y41-80E, 115 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 1,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 64W (Tc) Supplier Device Package: LFPAK56, Power-SO8 Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Vgs (Max): ±10V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: SC-100, SOT-669 ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: BUK9Y41-80E,115-ND,5 68-10980-6-ND,1727-1 500-2,568-10980-2-ND ,1727-1500-1,568-109 80-1-ND,568-10980-2, 568-10980-1,1727-150 0-6,568-10980-6,9340 67032115 Base Product Number: BUK9Y41 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325291-BUK9Y41-80E,115
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 64W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SC-100, SOT-669
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BUK9Y41-80E,115-ND,568-10980-6-ND,1727-1500-2,568-10980-2-ND,1727-1500-1,568-10980-1-ND,568-10980-2,568-10980-1,1727-1500-6,568-10980-6,934067032115
Base Product Number: BUK9Y41
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 80V, 24A, Lfpak56 Rohs Compliant Nexperia - 73AH9815 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 80V, 24A, Lfpak56 Rohs Compliant Nexperia
73AH9815
Mosfet, Aec-Q101, N-Ch, 80V, 24A, Lfpak56 Rohs Compliant Nexperia 73AH9815
MOSFET, AEC-Q101, N-CH, 80V, 24A, LFPAK56 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 80V, 24A, LFPAK56 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - BUK9Y41-80E,115 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK9Y41-80E,115
Single FETs, MOSFETs BUK9Y41-80E,115
MOSFET N-CH 80V 24A LFPAK56

MOSFET N-CH 80V 24A LFPAK56

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9Y41-80E,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9Y41-80E,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9Y41-80E,115
MOSFET N-CH 80V 24A LFPAK56

MOSFET N-CH 80V 24A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK9Y41-80E,115 1727-1500-6-ND 278-BUK9Y41-80E,115 1325291-BUK9Y41-80E,115 73AH9815 BUK9Y41-80E,115 BUK9Y41-80E,115
Product Name N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 Single FETs, MOSFETs N-Channel 80 V SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, Aec-Q101, N-Ch, 80V, 24A, Lfpak56 Rohs Compliant Nexperia Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 80 volts 80 volts
IDSS 24000 milliamps 24000 milliamps
VGS(off) 10 volts
PD 64 milliwatts 64000 milliwatts 64000 milliwatts
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