N-channel 40 V, 52 mΩ logic level MOSFET in an LFPAK33 (SOT1210) package designed for automotive applications, rated for a junction temperature up to 175 °C, with a drain-source on-state resistance of 40.7 mΩ at 5 V gate drive and 25 °C. It supports repetitive avalanche energy up to 4.98 mJ, has a gate-source threshold voltage of 0.5 V minimum at 175 °C, and is qualified to AEC-Q101 standard.
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 40V 17.6A (Tj) 31W Surface Mount LFPAK33
N-Channel 40V 17.6A (Tj) 31W Surface Mount LFPAK33
N-Channel 40V 17.6A (Tj) 31W Surface Mount LFPAK33
BUK9M52-40E - N-channel 40 V, 52 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M52-40EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M52-40EX can be used for catalog matching and distributor lookup.
Win Source Part Number: 973203-BUK9M52-40EX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 31W
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: NEXNEXBUK9M52-40EX,9
Base Product Number: BUK9M52
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
40V 17.6A 40mΩ@5A,10V 31W 2.1V@1mA null SOT-1210 MOSFETs ROHS
MOSFET BUK9M52-40E/MLFPAK/R
MOSFET N-CH 40V 17.6A LFPAK33
MOSFET, AEC-Q101, N-CH, 40V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:17.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0324ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 40V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:17.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0324ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 17.6A LFPAK33
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M52-40EX | 1727-7317-2-ND | 278-BUK9M52-40EX | 973203-BUK9M52-40EX | BUK9M52-40EX | BUK9M52-40EX | BUK9M52-40EX | 17AC9468 | BUK9M52-40EX |
| Product Name | N-channel 40 V, 52 mΩ logic level MOSFET in LFPAK33 | Single FETs, MOSFETs | N-Channel 40 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, Sot-1210; Transistor Polarity Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||||
| IDSS | 17600 milliamps | 17600 milliamps | 17600 milliamps | ||||||
| VGS(off) | 10 volts | 2.1 volts | |||||||
| PD | 31 milliwatts | 31000 milliwatts | 31000 milliwatts | 31000 milliwatts |
