Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025424-BUK9Y40-55B,
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 11nC @ 5V
Max Input Capacitance: 1020pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 36 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
N-channel TrenchMOS logic level FET SOIC 4-Pin Product overview: BUK9Y40-55B,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y40-55B,115 can be used for catalog matching and distributor lookup.
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| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9Y40-55B,115 | 1025424-BUK9Y40-55B,115 | 278-BUK9Y40-55B,115 | 1727-4943-1-ND | BUK9Y40-55B,115 | 73AH9814 | BUK9Y40-55B,115 |
| Product Name | N-channel TrenchMOS logic level FET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y40-55B,115 | N-Channel SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 55V, 26A, Lfpak56 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT669 | SOT3; LFPAK56, Power-SO8 | SC-100, SOT-669 | SC-100, SOT-669 | TO-3 | SC-100, SOT-669 | |
| Transistor Grade / Operating Range | Automotive | Automotive | |||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 55 volts | 55 volts | |||||
| PD | 59000 milliwatts | 59000 milliwatts |