Nexperia B.V. N-channel TrenchMOS logic level FET BUK9Y40-55B,115

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet

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Supplier Links
N-channel TrenchMOS logic level FET - BUK9Y40-55B,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
BUK9Y40-55B,115
N-channel TrenchMOS logic level FET BUK9Y40-55B,115
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Q101 compliant
  • Suitable for logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y40-55B,115 - 1025424-BUK9Y40-55B,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y40-55B,115
1025424-BUK9Y40-55B,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y40-55B,115 1025424-BUK9Y40-55B,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025424-BUK9Y40-55B, 115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 11nC @ 5V Max Input Capacitance: 1020pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 36 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025424-BUK9Y40-55B,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 11nC @ 5V
Max Input Capacitance: 1020pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 36 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel SOIC MOSFET Transistor
278-BUK9Y40-55B,115
N-Channel SOIC MOSFET Transistor 278-BUK9Y40-55B,115
N-channel TrenchMOS logic level FET SOIC 4-Pin Product overview: BUK9Y40-55B,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y40-55B,115 can be used for catalog matching and distributor lookup.

N-channel TrenchMOS logic level FET SOIC 4-Pin Product overview: BUK9Y40-55B,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y40-55B,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-4943-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4943-1-ND
Single FETs, MOSFETs 1727-4943-1-ND
N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4943-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4943-2-ND
Single FETs, MOSFETs 1727-4943-2-ND
N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4943-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4943-6-ND
Single FETs, MOSFETs 1727-4943-6-ND
N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 55V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single FETs, MOSFETs - BUK9Y40-55B,115 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK9Y40-55B,115
Single FETs, MOSFETs BUK9Y40-55B,115
MOSFET N-CH 55V 26A LFPAK56

MOSFET N-CH 55V 26A LFPAK56

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 55V, 26A, Lfpak56 Rohs Compliant Nexperia - 73AH9814 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 55V, 26A, Lfpak56 Rohs Compliant Nexperia
73AH9814
Mosfet, Aec-Q101, N-Ch, 55V, 26A, Lfpak56 Rohs Compliant Nexperia 73AH9814
MOSFET, AEC-Q101, N-CH, 55V, 26A, LFPAK56 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 55V, 26A, LFPAK56 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9Y40-55B,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9Y40-55B,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9Y40-55B,115
MOSFET N-CH 55V 26A LFPAK56

MOSFET N-CH 55V 26A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK9Y40-55B,115 1025424-BUK9Y40-55B,115 278-BUK9Y40-55B,115 1727-4943-1-ND BUK9Y40-55B,115 73AH9814 BUK9Y40-55B,115
Product Name N-channel TrenchMOS logic level FET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y40-55B,115 N-Channel SOIC MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 55V, 26A, Lfpak56 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT669 SOT3; LFPAK56, Power-SO8 SC-100, SOT-669 SC-100, SOT-669 TO-3 SC-100, SOT-669
Transistor Grade / Operating Range Automotive Automotive
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 55 volts 55 volts
PD 59000 milliwatts 59000 milliwatts
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