Nexperia B.V. N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 BUK9Y4R8-60E,115

Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 - BUK9Y4R8-60E,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56
BUK9Y4R8-60E,115
N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 BUK9Y4R8-60E,115
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1135321-BUK9Y4R8-60E,115 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1135321-BUK9Y4R8-60E,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1135321-BUK9Y4R8-60E,115
Win Source Part Number: 1135321-BUK9Y4R8-60E ,115 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchMOS™ Package: Tape & Reel Standard Package: 1,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 238W (Tc) Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V Vgs (Max): ±10V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): 934067017115; BUK9Y4R8-60E,115.; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 568-10983-6-ND,1727- 1503-6,568-10983-6,5 68-10983-2-ND,568-10 983-1,568-10983-1-ND ,1727-1503-2,BUK9Y4R 8-60E,115-ND,9340670 17115,1727-1503-1,56 8-10983-2 Base Product Number: BUK9Y4 Drive Voltage (Max Rds On, Min Rds On): 5V

Win Source Part Number: 1135321-BUK9Y4R8-60E,115
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 238W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): 934067017115; BUK9Y4R8-60E,115.;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-10983-6-ND,1727-1503-6,568-10983-6,568-10983-2-ND,568-10983-1,568-10983-1-ND,1727-1503-2,BUK9Y4R8-60E,115-ND,934067017115,1727-1503-1,568-10983-2
Base Product Number: BUK9Y4
Drive Voltage (Max Rds On, Min Rds On): 5V

Buy Now Datasheet
 - BUK9Y4R8-60E,115 - Rochester Electronics
Newburyport, MA, United States
N-channel 60 V, 4.8 mA logic level MOSFET in LFPAK56

N-channel 60 V, 4.8 mA logic level MOSFET in LFPAK56

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 60 V SOIC MOSFET Transistor
278-BUK9Y4R8-60E,115
N-Channel 60 V SOIC MOSFET Transistor 278-BUK9Y4R8-60E,115
BUK9Y4R8-60E - N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y4R8-60E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y4R8-60E,115 can be used for catalog matching and distributor lookup.

BUK9Y4R8-60E - N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y4R8-60E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y4R8-60E,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1503-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1503-1-ND
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N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-1503-6-ND - DigiKey
Thief River Falls, MN, United States
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1727-1503-6-ND
Single FETs, MOSFETs 1727-1503-6-ND
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

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Thief River Falls, MN, United States
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1727-1503-2-ND
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N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Mosfet Transistor, N Channel, 100 A, 60 V, 0.0029 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia - 90W4312 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 100 A, 60 V, 0.0029 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia
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MOSFET Transistor, N Channel, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9Y4R8-60E,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9Y4R8-60E,115
MOSFET N-CH 60V 100A LFPAK56

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Supplier's Site
Single FETs, MOSFETs - BUK9Y4R8-60E,115 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK9Y4R8-60E,115
Single FETs, MOSFETs BUK9Y4R8-60E,115
MOSFET N-CH 60V 100A LFPAK56

MOSFET N-CH 60V 100A LFPAK56

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK9Y4R8-60E,115 1135321-BUK9Y4R8-60E,115 BUK9Y4R8-60E,115 278-BUK9Y4R8-60E,115 1727-1503-1-ND 90W4312 BUK9Y4R8-60E,115 BUK9Y4R8-60E,115
Product Name N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 60 V SOIC MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor, N Channel, 100 A, 60 V, 0.0029 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 100000 milliamps 100000 milliamps
VGS(off) 10 volts
PD 238 milliwatts 238000 milliwatts 238000 milliwatts
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