N-channel 60 V logic level MOSFET in an LFPAK56 (SOT669) package, designed for high-performance automotive applications and qualified to AEC-Q101 standard. The device has a maximum drain-source voltage of 60 V, a continuous drain current of 100 A, and a maximum power dissipation of 238 W at 25 °C mounting base temperature. It features a drain-source on-state resistance of 3.3 mΩ to 4.8 mΩ at 25 °C and 10.8 mΩ at 175 °C, with repetitive avalanche energy rating of 199 mJ. The junction and storage temperature range is from -55 °C to 175 °C, and it has true logic level gate drive with V_GS(th) greater than 0.5 V at 175 °C. Thermal resistance from junction to mounting base is 0.63 K/W.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
BUK9Y4R8-60E - N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y4R8-60E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y4R8-60E,115
N-channel 60 V, 4.8 mA logic level MOSFET in LFPAK56
Win Source Part Number: 1135321-BUK9Y4R8-60E
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 238W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): 934067017115; BUK9Y4R8-60E,115.;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 568-10983-6-ND,1727-
Base Product Number: BUK9Y4
Drive Voltage (Max Rds On, Min Rds On): 5V
MOSFET Transistor, N Channel, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET N-CH 60V 100A LFPAK56
MOSFET N-CH 60V 100A LFPAK56
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9Y4R8-60E,115 | 1727-1503-1-ND | 278-BUK9Y4R8-60E,115 | BUK9Y4R8-60E,115 | 1135321-BUK9Y4R8-60E,115 | 90W4312 | BUK9Y4R8-60E,115 | BUK9Y4R8-60E,115 |
| Product Name | N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | N-Channel 60 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet Transistor, N Channel, 100 A, 60 V, 0.0029 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 100000 milliamps | 100000 milliamps | ||||||
| VGS(off) | 10 volts | |||||||
| PD | 238 milliwatts | 238000 milliwatts | 238000 milliwatts |
