N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, a gate-source voltage rating of ±20 V, and a continuous drain current of 210 mA at 25 °C when mounted on an FR4 PCB with a 1 cm² drain pad. The on-state resistance is 2.1 to 3.5 Ω at V_GS = 10 V and I_D = 200 mA. Total power dissipation is 266 mW at 25 °C ambient temperature. ElectroStatic Discharge (ESD) protection exceeds 2 kV HBM. Applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CHANNEL 60V 210MA SC70
N-Channel 60V 210mA (Ta) Surface Mount SOT-323
MOSFET N-CHANNEL 60V 210MA SC70
MOSFET NX138BKW/SC-70/REEL 13" Q1/T1
MOSFET N-CHANNEL 60V 210MA SC70
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NX138BKWF | 1727-NX138BKWFCT-ND | NX138BKWF | NX138BKWF |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 210000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 266 milliwatts |
