NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
Features and benefits
Applications
PBSS4112PAN - 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS4112PAN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 120 V, 1 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4112PAN,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791388-PBSS4112PAN,1
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 6-UDFN Exposed Pad
Mounting: SMD
Power - Max: 510mW
Transistor Type: 2 NPN (Dual)
Frequency - Transition: 120MHz
Family Name: PBSS4112PAN
Categories: Discrete Semiconductor Products
Manufacturer Package: DFN2020-6
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 120V
Vce Saturation (Maximum) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 60 @ 500mA, 2V
Introduction Date: November 29, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)
NEXPERIA PBSS4112PAN - 120 V, 1
TRANS 2NPN 120V 1A 6HUSON
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS4112PAN,115 | 277-PBSS4112PAN,115 | 791388-PBSS4112PAN,115 | 1727-PBSS4112PAN,115TR-ND | PBSS4112PAN,115 | PBSS4112PAN,115 |
| Product Name | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | 120 V 1 A DFN Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - PBSS4112PAN,115 | Bipolar Transistor Arrays | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT1118 SOT1118 | SOT3 | 6-UFDFN Exposed Pad | 6-UFDFN Exposed Pad | AEC-Q100 | |
| Polarity | NPN | NPN | 2 NPN (Dual); NPN | |||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 1.00E-4 milliamps | 1000 milliamps | 1000 milliamps | |||
| Power Gain | 60 dB |
