N-channel 60 V, 53 mΩ logic level MOSFET in an LFPAK33 (SOT1210) package, rated for 175 °C junction temperature, qualified to AEC-Q101, with repetitive avalanche capability and a gate-source threshold voltage greater than 0.5 V at 175 °C.
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK9M53-60E - N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M53-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M53-60EX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 913794-BUK9M53-60EX
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 17A (Tc) 36W (Tc) Surface Mount LFPAK33
Package: SOT-1210, 8-LFPAK33 (5-Lead)
Package: Reel - TR
Mounting: Surface Mount
Family Name: BUK9M53
Categories: Discrete Semiconductor Products
Case / Package: LFPAK33
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 568-13027-6-ND, 1727-2583-6, 934070057115, BUK9M53-60E,115, 568-13027-1-ND, 568-13027-1, 568-13027-2, BUK9M53-60EX-ND, 568-13027-2-ND, 1727-2583-2, 568-13027-6, 1727-2583-1
N-Channel 60V 17A (Tc) 36W (Tc) Surface Mount LFPAK33
N-Channel 60V 17A (Tc) 36W (Tc) Surface Mount LFPAK33
N-Channel 60V 17A (Tc) 36W (Tc) Surface Mount LFPAK33
MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 17A LFPAK33
MOSFET BUK9M53-60E/MLFPAK/R
MOSFET N-CH 60V 17A LFPAK33
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M53-60EX | 278-BUK9M53-60EX | 913794-BUK9M53-60EX | 1727-2583-1-ND | 1530746 | 1531950P | 17AC9469 | BUK9M53-60EX | BUK9M53-60EX | BUK9M53-60EX |
| Product Name | N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33 | N-Channel 60 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9M53-60EX | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||
| IDSS | 17000 milliamps | 17000 milliamps | 17000 milliamps | |||||||
| VGS(off) | 10 volts | |||||||||
| PD | 36 milliwatts | 36000 milliwatts |
