Nexperia B.V. 30 V, 1 A NPN/NPN low VCEsat transistor PBSS4130PAN,115

Description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP PNP/PNP complement: PBSS5130PAP Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP PNP/PNP complement: PBSS5130PAP Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 1 A NPN/NPN low VCEsat transistor - PBSS4130PAN,115 - Nexperia B.V.
Nijmegen, Netherlands
30 V, 1 A NPN/NPN low VCEsat transistor
PBSS4130PAN,115
30 V, 1 A NPN/NPN low VCEsat transistor PBSS4130PAN,115
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP PNP/PNP complement: PBSS5130PAP Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4130PANP

PNP/PNP complement: PBSS5130PAP

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High energy efficiency due to less heat generation

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Singapore, Singapore
30 V 1 A DFN Bipolar Transistor
277-PBSS4130PAN,115
30 V 1 A DFN Bipolar Transistor 277-PBSS4130PAN,115
PBSS4130PAN - 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS4130PAN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 1 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4130PAN,115 can be used for catalog matching and distributor lookup.

PBSS4130PAN - 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor DFN 6-Pin Product overview: PBSS4130PAN,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 1 A, DFN, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS4130PAN,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - PBSS4130PAN,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PBSS4130PAN,115DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4130PAN,115DKR-ND
Bipolar Transistor Arrays 1727-PBSS4130PAN,115DKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS4130PAN,115CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4130PAN,115CT-ND
Bipolar Transistor Arrays 1727-PBSS4130PAN,115CT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS4130PAN,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS4130PAN,115TR-ND
Bipolar Transistor Arrays 1727-PBSS4130PAN,115TR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1A 165MHz 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
Bipolar Transistor Arrays - PBSS4130PAN,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
PBSS4130PAN,115
Bipolar Transistor Arrays PBSS4130PAN,115
TRANS 2NPN 30V 1A 6HUSON

TRANS 2NPN 30V 1A 6HUSON

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Dual Npn, 30 V, 165 Mhz, 2 W, 1 A, 180 Rohs Compliant Nexperia - 67W0117 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Dual Npn, 30 V, 165 Mhz, 2 W, 1 A, 180 Rohs Compliant Nexperia
67W0117
Bipolar (Bjt) Single Transistor, Dual Npn, 30 V, 165 Mhz, 2 W, 1 A, 180 Rohs Compliant Nexperia 67W0117
Bipolar (BJT) Single Transistor, Dual NPN, 30 V, 165 MHz, 2 W, 1 A, 180 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Dual NPN, 30 V, 165 MHz, 2 W, 1 A, 180 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4130PAN,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4130PAN,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4130PAN,115
TRANS 2NPN 30V 1A 6HUSON

TRANS 2NPN 30V 1A 6HUSON

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4130PAN,115 277-PBSS4130PAN,115 PBSS4130PAN,115 1727-PBSS4130PAN,115DKR-ND PBSS4130PAN,115 67W0117 PBSS4130PAN,115
Product Name 30 V, 1 A NPN/NPN low VCEsat transistor 30 V 1 A DFN Bipolar Transistor Bipolar Transistor Arrays Bipolar Transistor Arrays Bipolar (Bjt) Single Transistor, Dual Npn, 30 V, 165 Mhz, 2 W, 1 A, 180 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT1118 SOT1118 SOT1118 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad TO-3 AEC-Q100
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity NPN 2 NPN (Dual); NPN NPN
Transistor Grade / Operating Range Automotive
IC(max) 1000 milliamps 1000 milliamps
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