Nexperia B.V. 50 V; 3 A NPN low VCEsat transistor PBSS4350T,215

Description
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)
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Request a Quote Datasheet
Description
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V; 3 A NPN low VCEsat transistor - PBSS4350T,215 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V; 3 A NPN low VCEsat transistor
PBSS4350T,215
50 V; 3 A NPN low VCEsat transistor PBSS4350T,215
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)

NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5350T

Features and benefits

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation

Applications

  • Power management applications
  • Low and medium power DC/DC converters
  • Supply line switching
  • Battery chargers
  • Linear voltage regulation with low voltage drop-out (LDO)
Supplier's Site Datasheet
Single Bipolar Transistors - PBSS4350T,215 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS4350T,215
Single Bipolar Transistors PBSS4350T,215
TRANS NPN 50V 2A TO236AB

TRANS NPN 50V 2A TO236AB

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4350T,215 - 1086487-PBSS4350T,215 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4350T,215
1086487-PBSS4350T,215
TRANSISTORS - Transistors (BJT) - Single - PBSS4350T,215 1086487-PBSS4350T,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086487-PBSS4350T,21 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: PBSS4350T Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236AB (SOT23) Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 370mV @ 300mA, 3A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 300 @ 1A, 2V Maximum Power Dissipation: 540mW Alternative Parts (Cross-Reference): UFMMT619; CPH3245-TL-E; 2SC5692; FMMT619TA; Introduction Date: August 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086487-PBSS4350T,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Family Name: PBSS4350T
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 370mV @ 300mA, 3A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 300 @ 1A, 2V
Maximum Power Dissipation: 540mW
Alternative Parts (Cross-Reference): UFMMT619; CPH3245-TL-E; 2SC5692; FMMT619TA;
Introduction Date: August 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
50 V 3 A Bipolar Transistor
276-PBSS4350T,215
50 V 3 A Bipolar Transistor 276-PBSS4350T,215
PBSS4350T - 50 V; 3 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4350T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4350T,215 can be used for catalog matching and distributor lookup.

PBSS4350T - 50 V; 3 A NPN low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS4350T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS4350T,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-5113-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5113-2-ND
Single Bipolar Transistors 1727-5113-2-ND
Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-5113-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5113-6-ND
Single Bipolar Transistors 1727-5113-6-ND
Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-5113-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5113-1-ND
Single Bipolar Transistors 1727-5113-1-ND
Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4350T,215 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4350T,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4350T,215
TRANS NPN 50V 2A TO236AB

TRANS NPN 50V 2A TO236AB

Supplier's Site
Trans, Npn, 50V, 3A, 150Deg C, 0.3W; Transistor Polarity Nexperia - 38K6399 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 50V, 3A, 150Deg C, 0.3W; Transistor Polarity Nexperia
38K6399
Trans, Npn, 50V, 3A, 150Deg C, 0.3W; Transistor Polarity Nexperia 38K6399
TRANS, NPN, 50V, 3A, 150DEG C, 0.3W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:3A; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

TRANS, NPN, 50V, 3A, 150DEG C, 0.3W; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:3A; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 300 Mw, 3 A, 300 Rohs Compliant Nexperia - 93X4535 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 300 Mw, 3 A, 300 Rohs Compliant Nexperia
93X4535
Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 300 Mw, 3 A, 300 Rohs Compliant Nexperia 93X4535
Bipolar (BJT) Single Transistor, NPN, 50 V, 100 MHz, 300 mW, 3 A, 300 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 50 V, 100 MHz, 300 mW, 3 A, 300 RoHS Compliant: Yes

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
PBSS4350T,215
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT PBSS4350T,215
50V 540mW 300@1A,2V 2A NPN SOT-23 Bipolar Transistors - BJT ROHS

50V 540mW 300@1A,2V 2A NPN SOT-23 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4350T,215 PBSS4350T,215 1086487-PBSS4350T,215 276-PBSS4350T,215 1727-5113-2-ND PBSS4350T,215 38K6399 93X4535 PBSS4350T,215
Product Name 50 V; 3 A NPN low VCEsat transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PBSS4350T,215 50 V 3 A Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Npn, 50V, 3A, 150Deg C, 0.3W; Transistor Polarity Nexperia Bipolar (Bjt) Single Transistor, Npn, 50 V, 100 Mhz, 300 Mw, 3 A, 300 Rohs Compliant Nexperia Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN; NPN NPN NPN NPN NPN
Package Type SOT23; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236AB (SOT23) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 SOT23
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
Operating Frequency 100 MHz 100 MHz
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