P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1084180-NX2301P,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 380pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB
MOSFET P-CH 20V 2A TO236AB
MOSFET P-CH 20V 2A TO-236AB
MOSFET P-CH 20V 2A TO236AB
20V 2A 120mΩ@4.5V,1A 1.1V@250uA P Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX2301P,215 | 1084180-NX2301P,215 | 1727-1148-1-ND | NX2301P,215 | 554-NX2301P,215 | NX2301P,215 | NX2301P,215 |
| Product Name | 20 V, 2 A P-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX2301P,215 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET P-CH 20V 2A TO-236AB | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| Package Type | SOT23; SOT23 SOT23 | SOT3; SOT23; TO-236AB (SOT23) | SOT23; TO-236-3, SC-59, SOT-23-3 | 6 nC @ 4.5 V | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||
| PD | 400 to 2800 milliwatts | 400 milliwatts | 400 milliwatts | 400 milliwatts |
