Nexperia B.V. 20 V, 2 A P-channel Trench MOSFET NX2301P,215

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive AEC-Q101 qualified Trench MOSFET technology Very fast switching Applications High-side loadswitch High-speed line driver Relay driver Switching circuits
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive AEC-Q101 qualified Trench MOSFET technology Very fast switching Applications High-side loadswitch High-speed line driver Relay driver Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, 2 A P-channel Trench MOSFET - NX2301P,215 - Nexperia B.V.
Nijmegen, Netherlands
20 V, 2 A P-channel Trench MOSFET
NX2301P,215
20 V, 2 A P-channel Trench MOSFET NX2301P,215
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive AEC-Q101 qualified Trench MOSFET technology Very fast switching Applications High-side loadswitch High-speed line driver Relay driver Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • 1.8 V RDSon rated for Low Voltage Gate Drive
  • AEC-Q101 qualified
  • Trench MOSFET technology
  • Very fast switching

Applications

  • High-side loadswitch
  • High-speed line driver
  • Relay driver
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1148-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1148-1-ND
Single FETs, MOSFETs 1727-1148-1-ND
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1148-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1148-2-ND
Single FETs, MOSFETs 1727-1148-2-ND
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1148-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1148-6-ND
Single FETs, MOSFETs 1727-1148-6-ND
P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX2301P,215 - 1084180-NX2301P,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX2301P,215
1084180-NX2301P,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX2301P,215 1084180-NX2301P,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1084180-NX2301P,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 400mW (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 380pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1084180-NX2301P,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 380pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NX2301P,215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NX2301P,215
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NX2301P,215
MOSFET P-CH 20V 2A TO236AB

MOSFET P-CH 20V 2A TO236AB

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
NX2301P,215
Triode/MOS Tube/Transistor >> MOSFETs NX2301P,215
20V 2A 120mΩ@4.5V,1A 1.1V@250uA P Channel SOT-23 MOSFETs ROHS

20V 2A 120mΩ@4.5V,1A 1.1V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - NX2301P,215 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NX2301P,215
Single FETs, MOSFETs NX2301P,215
MOSFET P-CH 20V 2A TO236AB

MOSFET P-CH 20V 2A TO236AB

Supplier's Site Datasheet
MOSFET P-CH 20V 2A TO-236AB - 554-NX2301P,215 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 2A TO-236AB
554-NX2301P,215
MOSFET P-CH 20V 2A TO-236AB 554-NX2301P,215
MOSFET P-CH 20V 2A TO-236AB

MOSFET P-CH 20V 2A TO-236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NX2301P,215 1727-1148-1-ND 1084180-NX2301P,215 NX2301P,215 NX2301P,215 NX2301P,215 554-NX2301P,215
Product Name 20 V, 2 A P-channel Trench MOSFET Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX2301P,215 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs MOSFET P-CH 20V 2A TO-236AB
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236AB (SOT23) 6 nC @ 4.5 V SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel
Transistor Grade / Operating Range Automotive
V(BR)DSS 20 volts 20 volts 20 volts 20 volts
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