Nexperia B.V. 60 V, single N-channel Trench MOSFET NX138BKR

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
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Datasheet
Datasheet Summary
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Single N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted package rated for 60 V drain-source voltage and 265 mA continuous drain current at 25 °C, with a typical on-state resistance of 2.1 Ω at 10 V gate-source voltage. It features ESD protection exceeding 2 kV HBM and operates within a junction temperature range of -55 °C to 150 °C. The device is suitable for relay driving, high-speed line driving, and low-side load switching applications.

Datasheet Summary
Powered by GS/AI

Single N-channel Trench MOSFET in a SOT23 (TO-236AB) surface-mounted package rated for 60 V drain-source voltage and 265 mA continuous drain current at 25 °C, with a typical on-state resistance of 2.1 Ω at 10 V gate-source voltage. It features ESD protection exceeding 2 kV HBM and operates within a junction temperature range of -55 °C to 150 °C. The device is suitable for relay driving, high-speed line driving, and low-side load switching applications.

Suppliers

Company
Product
Description
Supplier Links
60 V, single N-channel Trench MOSFET - NX138BKR - Nexperia B.V.
Nijmegen, Netherlands
60 V, single N-channel Trench MOSFET
NX138BKR
60 V, single N-channel Trench MOSFET NX138BKR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2662-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2662-2-ND
Single FETs, MOSFETs 1727-2662-2-ND
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2662-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2662-6-ND
Single FETs, MOSFETs 1727-2662-6-ND
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2662-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2662-1-ND
Single FETs, MOSFETs 1727-2662-1-ND
N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1082975-NX138BKR - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1082975-NX138BKR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1082975-NX138BKR
Win Source Part Number: 1082975-NX138BKR Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 310mW (Ta) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): DMN65D8LQ-13; DMN65D8LQ-7; DMN67D8L-7; ON5520,215; SN7002NH6433XTMA1; SN7002NH6327XTSA1; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Nexperia USA Inc. Other Names: 568-13167-2-ND,NX138 BKR-ND,568-13167-1-N D,1727-2662-6,934070 058215,568-13167-1,5 68-13167-6-ND,568-13 167-2,568-13167-6,17 27-2662-1,1727-2662- 2 Base Product Number: NX138 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Win Source Part Number: 1082975-NX138BKR
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): DMN65D8LQ-13; DMN65D8LQ-7; DMN67D8L-7; ON5520,215; SN7002NH6433XTMA1; SN7002NH6327XTSA1;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Nexperia USA Inc.
Other Names: 568-13167-2-ND,NX138BKR-ND,568-13167-1-ND,1727-2662-6,934070058215,568-13167-1,568-13167-6-ND,568-13167-2,568-13167-6,1727-2662-1,1727-2662-2
Base Product Number: NX138
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Buy Now Datasheet
Singapore, Singapore
N-Channel 60 V MOSFET Transistor
278-NX138BKR
N-Channel 60 V MOSFET Transistor 278-NX138BKR
NX138BK - 60 V, single N-channel Trench MOSFET TO-236 3-Pin Product overview: NX138BKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NX138BKR can be used for catalog matching and distributor lookup.

NX138BK - 60 V, single N-channel Trench MOSFET TO-236 3-Pin Product overview: NX138BKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NX138BKR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NX138BKR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NX138BKR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NX138BKR
MOSFET N-CH 60V 265MA TO236AB

MOSFET N-CH 60V 265MA TO236AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
NX138BKR
MOSFET NX138BKR
MOSFET NX138BK/TO-236AB/REE L 7" Q3/T4

MOSFET NX138BK/TO-236AB/REEL 7" Q3/T4

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.265A, Sot-23-3; Transistor Polarity Nexperia - 82Y7107 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.265A, Sot-23-3; Transistor Polarity Nexperia
82Y7107
Mosfet, N-Ch, 60V, 0.265A, Sot-23-3; Transistor Polarity Nexperia 82Y7107
MOSFET, N-CH, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 0.265A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:265mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - NX138BKR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NX138BKR
Single FETs, MOSFETs NX138BKR
MOSFET N-CH 60V 265MA TO236AB

MOSFET N-CH 60V 265MA TO236AB

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NX138BKR 1727-2662-2-ND 1082975-NX138BKR 278-NX138BKR NX138BKR NX138BKR 82Y7107 NX138BKR
Product Name 60 V, single N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 60 V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.265A, Sot-23-3; Transistor Polarity Nexperia Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 265000 milliamps 265 milliamps 265 milliamps
VGS(off) 20 volts
PD 310 milliwatts 310 milliwatts 310 milliwatts
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